All Transistors. BFR90B Datasheet

 

BFR90B Datasheet, Equivalent, Cross Reference Search


   Type Designator: BFR90B
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 0.2 W
   Maximum Collector-Base Voltage |Vcb|: 20 V
   Maximum Collector-Emitter Voltage |Vce|: 15 V
   Maximum Emitter-Base Voltage |Veb|: 3 V
   Maximum Collector Current |Ic max|: 0.025 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Transition Frequency (ft): 2500 MHz
   Collector Capacitance (Cc): 0.8 pF
   Forward Current Transfer Ratio (hFE), MIN: 80
   Noise Figure, dB: -
   Package: TO51

 BFR90B Transistor Equivalent Substitute - Cross-Reference Search

   

BFR90B Datasheet (PDF)

 9.1. Size:76K  motorola
 bfr90rev.pdf

BFR90B BFR90B

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby BFR90/DThe RF LineNPN SiliconBFR90High-Frequency TransistorDesigned primarily for use in highgain, lownoise, smallsignal amplifiers.Also used in applications requiring fast switching times. High CurrentGain Bandwidth Product fT = 5.0 GHz (Typ) @ IC = 14 mAfT = 5.0 GHz @ 14 mA Low Noise F

Datasheet: 2SA1771 , 2SA178 , 2SA1790 , 2SA1791 , 2SA1792 , 2SA1793 , 2SA1794 , 2SA1795 , 2N3906 , 2SA1799 , 2SA17H , 2SA18 , 2SA180 , 2SA1800 , 2SA1800O , 2SA1800R , 2SA1800Y .

History: BFR93A

 

 
Back to Top