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BFR96S Specs and Replacement


   Type Designator: BFR96S
   Material of Transistor: Si
   Polarity: NPN

Absolute Maximum Ratings


   Maximum Collector Power Dissipation (Pc): 0.7 W
   Maximum Collector-Base Voltage |Vcb|: 20 V
   Maximum Collector-Emitter Voltage |Vce|: 15 V
   Maximum Collector Current |Ic max|: 0.1 A
   Max. Operating Junction Temperature (Tj): 175 °C

Electrical Characteristics


   Transition Frequency (ft): 5000 MHz
   Forward Current Transfer Ratio (hFE), MIN: 25
   Noise Figure, dB: -
   Package: TO51
 

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BFR96S datasheet

 9.1. Size:98K  motorola
 bfr96rev.pdf pdf_icon

BFR96S

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by BFR96/D The RF Line NPN Silicon High-Frequency Transistor BFR96 The BFR96 transistor uses the same state of the art microwave transistor chip which features fine line geometry, ion implanted arsenic emitters and gold top metallization. This transistor is intended for low to medium power amplifiers requiring hi... See More ⇒

Detailed specifications: BFR93AR , BFR93L , BFR93P , BFR93R , BFR94 , BFR95 , BFR96 , BFR96H , 2N2907 , BFR96T , BFR97 , BFR98 , BFR99 , BFR99A , BFS10 , BFS11 , BFS12 .

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