BFR96S Datasheet, Equivalent, Cross Reference Search
Type Designator: BFR96S
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 0.7 W
Maximum Collector-Base Voltage |Vcb|: 20 V
Maximum Collector-Emitter Voltage |Vce|: 15 V
Maximum Collector Current |Ic max|: 0.1 A
Max. Operating Junction Temperature (Tj): 175 °C
Transition Frequency (ft): 5000 MHz
Forward Current Transfer Ratio (hFE), MIN: 25
Noise Figure, dB: -
Package: TO51
BFR96S Transistor Equivalent Substitute - Cross-Reference Search
BFR96S Datasheet (PDF)
bfr96rev.pdf
MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby BFR96/DThe RF LineNPN SiliconHigh-Frequency TransistorBFR96The BFR96 transistor uses the same stateoftheart microwave transistorchip which features fineline geometry, ionimplanted arsenic emitters and goldtop metallization. This transistor is intended for lowtomedium power amplifiersrequiring hi
Datasheet: BFR93AR , BFR93L , BFR93P , BFR93R , BFR94 , BFR95 , BFR96 , BFR96H , MPSA42 , BFR96T , BFR97 , BFR98 , BFR99 , BFR99A , BFS10 , BFS11 , BFS12 .