BFR96S Datasheet. Specs and Replacement

Type Designator: BFR96S  📄📄 

Material of Transistor: Si

Polarity: NPN

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 0.7 W

Maximum Collector-Base Voltage |Vcb|: 20 V

Maximum Collector-Emitter Voltage |Vce|: 15 V

Maximum Collector Current |Ic max|: 0.1 A

Max. Operating Junction Temperature (Tj): 175 °C

Electrical Characteristics

Transition Frequency (ft): 5000 MHz

Forward Current Transfer Ratio (hFE), MIN: 25

Noise Figure, dB: -

Package: TO51

  📄📄 Copy 

 BFR96S Substitution

- BJT ⓘ Cross-Reference Search

 

BFR96S datasheet

 9.1. Size:98K  motorola

 bfr96rev.pdf pdf_icon

BFR96S

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by BFR96/D The RF Line NPN Silicon High-Frequency Transistor BFR96 The BFR96 transistor uses the same state of the art microwave transistor chip which features fine line geometry, ion implanted arsenic emitters and gold top metallization. This transistor is intended for low to medium power amplifiers requiring hi... See More ⇒

Detailed specifications: BFR93AR, BFR93L, BFR93P, BFR93R, BFR94, BFR95, BFR96, BFR96H, D209L, BFR96T, BFR97, BFR98, BFR99, BFR99A, BFS10, BFS11, BFS12

Keywords - BFR96S pdf specs

 BFR96S cross reference

 BFR96S equivalent finder

 BFR96S pdf lookup

 BFR96S substitution

 BFR96S replacement