All Transistors. BFS50 Datasheet

 

BFS50 Datasheet and Replacement


   Type Designator: BFS50
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 2.7 W
   Maximum Collector-Base Voltage |Vcb|: 36 V
   Maximum Collector-Emitter Voltage |Vce|: 18 V
   Maximum Emitter-Base Voltage |Veb|: 3 V
   Maximum Collector Current |Ic max|: 0.4 A
   Max. Operating Junction Temperature (Tj): 200 °C
   Transition Frequency (ft): 6 MHz
   Collector Capacitance (Cc): 4.5 pF
   Forward Current Transfer Ratio (hFE), MIN: 1000
   Noise Figure, dB: -
   Package: TO39
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BFS50 Datasheet (PDF)

 0.1. Size:263K  philips
 bfs505 cnv.pdf pdf_icon

BFS50

DISCRETE SEMICONDUCTORS DATA SHEETBFS505NPN 9 GHz wideband transistorProduct specification September 1995NXP Semiconductors Product specificationNPN 9 GHz wideband transistor BFS505FEATURES PINNING Low current consumptionPIN DESCRIPTION3handbook, 2 columns High power gainCode: N0 Low noise figure1 base High transition frequency2 emitter Gold

 0.2. Size:89K  philips
 bfs505.pdf pdf_icon

BFS50

DISCRETE SEMICONDUCTORSDATA SHEETBFS505NPN 9 GHz wideband transistorSeptember 1995Product specificationFile under Discrete Semiconductors, SC14Philips Semiconductors Product specificationNPN 9 GHz wideband transistor BFS505FEATURES PINNING Low current consumptionPIN DESCRIPTIONhandbook, 2 columns High power gain 3Code: N0 Low noise figure1 base Hig

Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .

History: BCY98 | BF418 | GES6004 | ZXTN5551G | 3DD3997 | BC548B | KRA731E

Keywords - BFS50 transistor datasheet

 BFS50 cross reference
 BFS50 equivalent finder
 BFS50 lookup
 BFS50 substitution
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