BFS50 Datasheet, Equivalent, Cross Reference Search
Type Designator: BFS50
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 2.7 W
Maximum Collector-Base Voltage |Vcb|: 36 V
Maximum Collector-Emitter Voltage |Vce|: 18 V
Maximum Emitter-Base Voltage |Veb|: 3 V
Maximum Collector Current |Ic max|: 0.4 A
Max. Operating Junction Temperature (Tj): 200 °C
Transition Frequency (ft): 6 MHz
Collector Capacitance (Cc): 4.5 pF
Forward Current Transfer Ratio (hFE), MIN: 1000
Noise Figure, dB: -
Package: TO39
BFS50 Transistor Equivalent Substitute - Cross-Reference Search
BFS50 Datasheet (PDF)
bfs505 cnv.pdf
DISCRETE SEMICONDUCTORS DATA SHEETBFS505NPN 9 GHz wideband transistorProduct specification September 1995NXP Semiconductors Product specificationNPN 9 GHz wideband transistor BFS505FEATURES PINNING Low current consumptionPIN DESCRIPTION3handbook, 2 columns High power gainCode: N0 Low noise figure1 base High transition frequency2 emitter Gold
bfs505.pdf
DISCRETE SEMICONDUCTORSDATA SHEETBFS505NPN 9 GHz wideband transistorSeptember 1995Product specificationFile under Discrete Semiconductors, SC14Philips Semiconductors Product specificationNPN 9 GHz wideband transistor BFS505FEATURES PINNING Low current consumptionPIN DESCRIPTIONhandbook, 2 columns High power gain 3Code: N0 Low noise figure1 base Hig
Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .
