BFS50 Datasheet. Specs and Replacement
Type Designator: BFS50
Material of Transistor: Si
Polarity: NPN
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 2.7 W
Maximum Collector-Base Voltage |Vcb|: 36 V
Maximum Collector-Emitter Voltage |Vce|: 18 V
Maximum Emitter-Base Voltage |Veb|: 3 V
Maximum Collector Current |Ic max|: 0.4 A
Max. Operating Junction Temperature (Tj): 200 °C
Electrical Characteristics
Transition Frequency (ft): 6 MHz
Collector Capacitance (Cc): 4.5 pF
Forward Current Transfer Ratio (hFE), MIN: 1000
Package: TO39
BFS50 Substitution
- BJT ⓘ Cross-Reference Search
BFS50 datasheet
DISCRETE SEMICONDUCTORS DATA SHEET BFS505 NPN 9 GHz wideband transistor Product specification September 1995 NXP Semiconductors Product specification NPN 9 GHz wideband transistor BFS505 FEATURES PINNING Low current consumption PIN DESCRIPTION 3 handbook, 2 columns High power gain Code N0 Low noise figure 1 base High transition frequency 2 emitter Gold ... See More ⇒
DISCRETE SEMICONDUCTORS DATA SHEET BFS505 NPN 9 GHz wideband transistor September 1995 Product specification File under Discrete Semiconductors, SC14 Philips Semiconductors Product specification NPN 9 GHz wideband transistor BFS505 FEATURES PINNING Low current consumption PIN DESCRIPTION handbook, 2 columns High power gain 3 Code N0 Low noise figure 1 base Hig... See More ⇒
Detailed specifications: BFS44, BFS45, BFS46, BFS46A, BFS480, BFS481, BFS482, BFS483, 2SD669A, BFS51, BFS55, BFS55A, BFS57, BFS57P, BFS58, BFS58P, BFS59
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