BFT30 Specs and Replacement
Type Designator: BFT30
Material of Transistor: Si
Polarity: NPN
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 0.36 W
Maximum Collector-Base Voltage |Vcb|: 70 V
Maximum Collector-Emitter Voltage |Vce|: 60 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 1 A
Max. Operating Junction Temperature (Tj): 200 °C
Electrical Characteristics
Transition Frequency (ft): 100 MHz
Collector Capacitance (Cc): 10 pF
Forward Current Transfer Ratio (hFE), MIN: 75
Package: TO18
BFT30 Substitution
- BJT ⓘ Cross-Reference Search
BFT30 datasheet
BFT30CSM Dimensions in mm (inches). Bipolar NPN Device in a 0.51 0.10 Hermetically sealed LCC1 (0.02 0.004) 0.31 rad. (0.012) Ceramic Surface Mount 3 Package for High Reliability Applications 21 1.91 0.10 (0.075 0.004) A 0.31 rad. Bipolar NPN Device. (0.012) 3.05 0.13 (0.12 0.005) 1.40 (0.055) 1.02 0.10 max. VCEO = 60V A = (0.04 0.004)... See More ⇒
Detailed specifications: BFT25R, BFT26, BFT27, BFT28, BFT28A, BFT28B, BFT28C, BFT29, 8550, BFT31, BFT32, BFT33, BFT34, BFT35, BFT35A, BFT36, BFT37
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