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BFT45 Datasheet, Equivalent, Cross Reference Search


   Type Designator: BFT45
   Material of Transistor: Si
   Polarity: PNP
   Maximum Collector Power Dissipation (Pc): 1 W
   Maximum Collector-Base Voltage |Vcb|: 250 V
   Maximum Collector-Emitter Voltage |Vce|: 250 V
   Maximum Collector Current |Ic max|: 0.5 A
   Max. Operating Junction Temperature (Tj): 200 °C
   Transition Frequency (ft): 30 MHz
   Forward Current Transfer Ratio (hFE), MIN: 50
   Noise Figure, dB: -
   Package: TO39

 BFT45 Transistor Equivalent Substitute - Cross-Reference Search

   

BFT45 Datasheet (PDF)

 ..1. Size:52K  philips
 bft45 cnv 2.pdf

BFT45 BFT45

DISCRETE SEMICONDUCTORSDATA SHEETM3D111BFT45PNP high-voltage transistor1997 Apr 18Product specificationSupersedes data of September 1994File under Discrete Semiconductors, SC04Philips Semiconductors Product specificationPNP high-voltage transistor BFT45FEATURES PINNING Low current (max. 500 mA)PIN DESCRIPTION High voltage (max. 250 V).1 emitter2 baseAPPL

Datasheet: 2SA1803O , 2SA1803R , 2SA1804 , 2SA1804O , 2SA1804R , 2SA1805 , 2SA1805O , 2SA1805R , D209L , 2SA181 , 2SA1810 , 2SA1810B , 2SA1810C , 2SA1811 , 2SA1815 , 2SA1815-3 , 2SA1815-4 .

 

 
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