BFT45 Specs and Replacement

Type Designator: BFT45

Material of Transistor: Si

Polarity: PNP

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 1 W

Maximum Collector-Base Voltage |Vcb|: 250 V

Maximum Collector-Emitter Voltage |Vce|: 250 V

Maximum Collector Current |Ic max|: 0.5 A

Max. Operating Junction Temperature (Tj): 200 °C

Electrical Characteristics

Transition Frequency (ft): 30 MHz

Forward Current Transfer Ratio (hFE), MIN: 50

Noise Figure, dB: -

Package: TO39

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BFT45 datasheet

 ..1. Size:52K  philips

 bft45 cnv 2.pdf pdf_icon

BFT45

DISCRETE SEMICONDUCTORS DATA SHEET M3D111 BFT45 PNP high-voltage transistor 1997 Apr 18 Product specification Supersedes data of September 1994 File under Discrete Semiconductors, SC04 Philips Semiconductors Product specification PNP high-voltage transistor BFT45 FEATURES PINNING Low current (max. 500 mA) PIN DESCRIPTION High voltage (max. 250 V). 1 emitter 2 base APPL... See More ⇒

Detailed specifications: BFT37, BFT37A, BFT39, BFT40, BFT41, BFT42, BFT43, BFT44, D965, BFT47, BFT48, BFT49, BFT50, BFT51, BFT53, BFT54, BFT55

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