BFX57III Datasheet. Specs and Replacement
Type Designator: BFX57III 📄📄
Material of Transistor: Si
Polarity: NPN
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 2 W
Maximum Collector-Base Voltage |Vcb|: 30 V
Maximum Collector-Emitter Voltage |Vce|: 20 V
Maximum Emitter-Base Voltage |Veb|: 3 V
Maximum Collector Current |Ic max|: 0.1 A
Max. Operating Junction Temperature (Tj): 200 °C
Electrical Characteristics
Transition Frequency (ft): 600 MHz
Collector Capacitance (Cc): 1 pF
Forward Current Transfer Ratio (hFE), MIN: 130
Package: TO12
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BFX57III datasheet
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Detailed specifications: BFX55, BFX56, BFX56I, BFX56II, BFX56III, BFX57, BFX57I, BFX57II, 2N3904, BFX58, BFX58D, BFX58I, BFX58II, BFX58III, BFX59, BFX59F, BFX59R
Keywords - BFX57III pdf specs
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BJT Parameters and How They Relate
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