BFX58D Datasheet. Specs and Replacement
Type Designator: BFX58D 📄📄
Material of Transistor: Si
Polarity: NPN
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 2.6 W
Maximum Collector-Base Voltage |Vcb|: 40 V
Maximum Collector-Emitter Voltage |Vce|: 40 V
Maximum Emitter-Base Voltage |Veb|: 6 V
Maximum Collector Current |Ic max|: 0.4 A
Max. Operating Junction Temperature (Tj): 180 °C
Electrical Characteristics
Transition Frequency (ft): 600 MHz
Collector Capacitance (Cc): 3 pF
Forward Current Transfer Ratio (hFE), MIN: 60
Package: TO39
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BFX58D datasheet
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Detailed specifications: BFX56I, BFX56II, BFX56III, BFX57, BFX57I, BFX57II, BFX57III, BFX58, 2N5551, BFX58I, BFX58II, BFX58III, BFX59, BFX59F, BFX59R, BFX60, BFX61
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