2N311 Specs and Replacement
Type Designator: 2N311
Material of Transistor: Ge
Polarity: PNP
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 0.075 W
Maximum Collector-Base Voltage |Vcb|: 15 V
Maximum Collector-Emitter Voltage |Vce|: 15 V
Maximum Emitter-Base Voltage |Veb|: 6 V
Maximum Collector Current |Ic max|: 0.05 A
Max. Operating Junction Temperature (Tj): 85 °C
Electrical Characteristics
Forward Current Transfer Ratio (hFE), MIN: 50
Package: TO5
2N311 Substitution
- BJT ⓘ Cross-Reference Search
2N311 datasheet
SILICON PLANAR EPITAXIAL NPN TRANSISTOR 2N3114CSM High Voltage Hermetic Ceramic Surface Mount Package Designed For Low Noise General Purpose Amplifiers, Driver Stages and Signal Processing Applications Screening Options Available ABSOLUTE MAXIMUM RATINGS (TA = 25 C unless otherwise stated) VCBO Collector Base Voltage 150V VCEO Collector Emitter V... See More ⇒
Detailed specifications: 2N3082, 2N3083, 2N309, 2N31, 2N310, 2N3107, 2N3108, 2N3109, 2SD718, 2N3110, 2N3110S, 2N3114, 2N3114S, 2N3115, 2N3116, 2N3117, 2N3118
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