2N311 Datasheet, Equivalent, Cross Reference Search
Type Designator: 2N311
Material of Transistor: Ge
Polarity: PNP
Maximum Collector Power Dissipation (Pc): 0.075 W
Maximum Collector-Base Voltage |Vcb|: 15 V
Maximum Collector-Emitter Voltage |Vce|: 15 V
Maximum Emitter-Base Voltage |Veb|: 6 V
Maximum Collector Current |Ic max|: 0.05 A
Max. Operating Junction Temperature (Tj): 85 °C
Forward Current Transfer Ratio (hFE), MIN: 50
Noise Figure, dB: -
Package: TO5
2N311 Transistor Equivalent Substitute - Cross-Reference Search
2N311 Datasheet (PDF)
0.3. Size:144K semelab
2n3114csm.pdf
2n3114csm.pdf
SILICON PLANAR EPITAXIAL NPN TRANSISTOR 2N3114CSM High Voltage Hermetic Ceramic Surface Mount Package Designed For Low Noise General Purpose Amplifiers, Driver Stages and Signal Processing Applications Screening Options Available ABSOLUTE MAXIMUM RATINGS (TA = 25C unless otherwise stated) VCBO Collector Base Voltage 150V VCEO Collector Emitter V
Datasheet: 2N3082 , 2N3083 , 2N309 , 2N31 , 2N310 , 2N3107 , 2N3108 , 2N3109 , A940 , 2N3110 , 2N3110S , 2N3114 , 2N3114S , 2N3115 , 2N3116 , 2N3117 , 2N3118 .
