All Transistors. BFX85 Datasheet

 

BFX85 Datasheet and Replacement


   Type Designator: BFX85
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 0.8 W
   Maximum Collector-Base Voltage |Vcb|: 100 V
   Maximum Collector-Emitter Voltage |Vce|: 60 V
   Maximum Emitter-Base Voltage |Veb|: 6 V
   Maximum Collector Current |Ic max|: 1 A
   Max. Operating Junction Temperature (Tj): 200 °C
   Transition Frequency (ft): 50 MHz
   Collector Capacitance (Cc): 12 pF
   Forward Current Transfer Ratio (hFE), MIN: 70
   Noise Figure, dB: -
   Package: TO5
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BFX85 Datasheet (PDF)

 ..1. Size:56K  philips
 bfx85 cnv 2.pdf pdf_icon

BFX85

DISCRETE SEMICONDUCTORSDATA SHEETM3D111BFX85NPN switching transistor1997 Apr 22Product specificationSupersedes data of Sepember 1994File under Discrete Semiconductors, SC04Philips Semiconductors Product specificationNPN switching transistor BFX85FEATURES PINNING High current (max. 1 A)PIN DESCRIPTION Low voltage (max. 60 V).1 emitter2 baseAPPLICATIONS3

 ..2. Size:134K  cdil
 bfx85.pdf pdf_icon

BFX85

Continental Device India LimitedAn ISO/TS 16949, ISO 9001 and ISO 14001 Certified CompanyNPN SILICON PLANAR TRANSISTOR BFX85TO-39Metal Can PackageAMPLIFIER TRANSISTORABSOLUTE MAXIMUM RATINGS (Ta=25C unless specified otherwise)DESCRIPTION SYMBOL VALUE UNITSVCEOCollector Emitter Voltage 60 VVCBOCollector Base Voltage 100 VVEBOEmitter Base Voltage 6.0 VICCollector C

Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .

History: 2SC3489 | 2N112A | RT2P01M | DTA114TMFHA | CTP1732 | CP502 | BC807S

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