BFX85 Specs and Replacement

Type Designator: BFX85

Material of Transistor: Si

Polarity: NPN

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 0.8 W

Maximum Collector-Base Voltage |Vcb|: 100 V

Maximum Collector-Emitter Voltage |Vce|: 60 V

Maximum Emitter-Base Voltage |Veb|: 6 V

Maximum Collector Current |Ic max|: 1 A

Max. Operating Junction Temperature (Tj): 200 °C

Electrical Characteristics

Transition Frequency (ft): 50 MHz

Collector Capacitance (Cc): 12 pF

Forward Current Transfer Ratio (hFE), MIN: 70

Noise Figure, dB: -

Package: TO5

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BFX85 datasheet

 ..1. Size:56K  philips

 bfx85 cnv 2.pdf pdf_icon

BFX85

DISCRETE SEMICONDUCTORS DATA SHEET M3D111 BFX85 NPN switching transistor 1997 Apr 22 Product specification Supersedes data of Sepember 1994 File under Discrete Semiconductors, SC04 Philips Semiconductors Product specification NPN switching transistor BFX85 FEATURES PINNING High current (max. 1 A) PIN DESCRIPTION Low voltage (max. 60 V). 1 emitter 2 base APPLICATIONS 3... See More ⇒

 ..2. Size:134K  cdil

 bfx85.pdf pdf_icon

BFX85

Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company NPN SILICON PLANAR TRANSISTOR BFX85 TO-39 Metal Can Package AMPLIFIER TRANSISTOR ABSOLUTE MAXIMUM RATINGS (Ta=25 C unless specified otherwise) DESCRIPTION SYMBOL VALUE UNITS VCEO Collector Emitter Voltage 60 V VCBO Collector Base Voltage 100 V VEBO Emitter Base Voltage 6.0 V IC Collector C... See More ⇒

Detailed specifications: BFX77, BFX79, BFX80, BFX80DCSM, BFX81, BFX81DCSM, BFX81DCSMM, BFX84, MJE340, BFX86, BFX87, BFX88, BFX89, BFX90, BFX91, BFX92, BFX92A

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