BFX85 Datasheet, Equivalent, Cross Reference Search
Type Designator: BFX85
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 0.8 W
Maximum Collector-Base Voltage |Vcb|: 100 V
Maximum Collector-Emitter Voltage |Vce|: 60 V
Maximum Emitter-Base Voltage |Veb|: 6 V
Maximum Collector Current |Ic max|: 1 A
Max. Operating Junction Temperature (Tj): 200 °C
Transition Frequency (ft): 50 MHz
Collector Capacitance (Cc): 12 pF
Forward Current Transfer Ratio (hFE), MIN: 70
Noise Figure, dB: -
Package: TO5
BFX85 Transistor Equivalent Substitute - Cross-Reference Search
BFX85 Datasheet (PDF)
bfx85 cnv 2.pdf
DISCRETE SEMICONDUCTORSDATA SHEETM3D111BFX85NPN switching transistor1997 Apr 22Product specificationSupersedes data of Sepember 1994File under Discrete Semiconductors, SC04Philips Semiconductors Product specificationNPN switching transistor BFX85FEATURES PINNING High current (max. 1 A)PIN DESCRIPTION Low voltage (max. 60 V).1 emitter2 baseAPPLICATIONS3
bfx85.pdf
Continental Device India LimitedAn ISO/TS 16949, ISO 9001 and ISO 14001 Certified CompanyNPN SILICON PLANAR TRANSISTOR BFX85TO-39Metal Can PackageAMPLIFIER TRANSISTORABSOLUTE MAXIMUM RATINGS (Ta=25C unless specified otherwise)DESCRIPTION SYMBOL VALUE UNITSVCEOCollector Emitter Voltage 60 VVCBOCollector Base Voltage 100 VVEBOEmitter Base Voltage 6.0 VICCollector C
Datasheet: 2SA1179M4 , 2SA1179M5 , 2SA1179M6 , 2SA1179M7 , 2SA118 , 2SA1180 , 2SA1180A , 2SA1182 , 2N3055 , 2SA1182Y , 2SA1183 , 2SA1184 , 2SA1185 , 2SA1186 , 2SA1186O , 2SA1186P , 2SA1186Y .
