2N3114 PDF Specs and Replacement
Type Designator: 2N3114
Material of Transistor: Si
Polarity: NPN
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 0.8 W
Maximum Collector-Base Voltage |Vcb|: 150 V
Maximum Collector-Emitter Voltage |Vce|: 150 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 0.2 A
Max. Operating Junction Temperature (Tj): 175 °C
Electrical Characteristics
Transition Frequency (ft): 40 MHz
Collector Capacitance (Cc): 9 pF
Forward Current Transfer Ratio (hFE), MIN: 30
Noise Figure, dB: -
Package: TO5
2N3114 Substitution
2N3114 PDF detailed specifications
0.1. Size:144K semelab
2n3114csm.pdf
2n3114csm.pdf
SILICON PLANAR EPITAXIAL NPN TRANSISTOR 2N3114CSM High Voltage Hermetic Ceramic Surface Mount Package Designed For Low Noise General Purpose Amplifiers, Driver Stages and Signal Processing Applications Screening Options Available ABSOLUTE MAXIMUM RATINGS (TA = 25 C unless otherwise stated) VCBO Collector Base Voltage 150V VCEO Collector Emitter V... See More ⇒
Detailed specifications: 2N31 , 2N310 , 2N3107 , 2N3108 , 2N3109 , 2N311 , 2N3110 , 2N3110S , 2SC2073 , 2N3114S , 2N3115 , 2N3116 , 2N3117 , 2N3118 , 2N3119 , 2N312 , 2N3120 .
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