2N3114 Datasheet, Equivalent, Cross Reference Search

   Type Designator: 2N3114
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 0.8 W
   Maximum Collector-Base Voltage |Vcb|: 150 V
   Maximum Collector-Emitter Voltage |Vce|: 150 V
   Maximum Emitter-Base Voltage |Veb|: 5 V
   Maximum Collector Current |Ic max|: 0.2 A
   Max. Operating Junction Temperature (Tj): 175 °C
   Transition Frequency (ft): 40 MHz
   Collector Capacitance (Cc): 9 pF
   Forward Current Transfer Ratio (hFE), MIN: 30
   Noise Figure, dB: -
   Package: TO5

2N3114 Transistor Equivalent Substitute - Cross-Reference Search

2N3114 Datasheet (PDF)

0.1. Size:144K semelab
2n3114csm.pdf

SILICON PLANAR EPITAXIAL NPN TRANSISTOR 2N3114CSM High Voltage Hermetic Ceramic Surface Mount Package Designed For Low Noise General Purpose Amplifiers, Driver Stages and Signal Processing Applications Screening Options Available ABSOLUTE MAXIMUM RATINGS (TA = 25C unless otherwise stated) VCBO Collector Base Voltage 150V VCEO Collector Emitter V

9.1. Size:354K rca
2n3118.pdf