BFY19 Specs and Replacement
Type Designator: BFY19
Material of Transistor: Si
Polarity: NPN
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 0.3 W
Maximum Collector-Base Voltage |Vcb|: 30 V
Maximum Collector-Emitter Voltage |Vce|: 20 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 0.1 A
Max. Operating Junction Temperature (Tj): 175 °C
Electrical Characteristics
Transition Frequency (ft): 300 MHz
Collector Capacitance (Cc): 7 pF
Forward Current Transfer Ratio (hFE), MIN: 50
Package: TO18
BFY19 Substitution
- BJT ⓘ Cross-Reference Search
BFY19 datasheet
HiRel NPN Silicon RF Transistor BFY 193 Features HiRel Discrete and Microwave Semiconductor For low noise, high gain broadband amplifiers up to 2 GHz. For linear broadband amplifiers Hermetically sealed microwave package fT = 8 GHz, F = 2.3 dB at 2 GHz qualified Micro-X1 ESA/SCC Detail Spec. No. 5611/006 ESD Electrostatic discharge sensitive device, observe han... See More ⇒
HiRel NPN Silicon RF Transistor BFY 196 Features HiRel Discrete and Microwave Semiconductor For low noise, high gain amplifiers up to 2 GHz. For linear broadband amplifiers Hermetically sealed microwave package fT = 6.5 GHz, F = 3 dB at 2 GHz ESA Qualification pending Micro-X1 ESD Electrostatic discharge sensitive device, observe handling precautions! Type Marking O... See More ⇒
Detailed specifications: BFY14, BFY14B, BFY14C, BFY14D, BFY15, BFY16, BFY17, BFY18, 2SD669, BFY20, BFY21, BFY22, BFY23, BFY23A, BFY24, BFY25, BFY27
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