All Transistors. BFY19 Datasheet

 

BFY19 Datasheet and Replacement


   Type Designator: BFY19
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 0.3 W
   Maximum Collector-Base Voltage |Vcb|: 30 V
   Maximum Collector-Emitter Voltage |Vce|: 20 V
   Maximum Emitter-Base Voltage |Veb|: 5 V
   Maximum Collector Current |Ic max|: 0.1 A
   Max. Operating Junction Temperature (Tj): 175 °C
   Transition Frequency (ft): 300 MHz
   Collector Capacitance (Cc): 7 pF
   Forward Current Transfer Ratio (hFE), MIN: 50
   Noise Figure, dB: -
   Package: TO18
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BFY19 Datasheet (PDF)

 0.1. Size:122K  siemens
 bfy193.pdf pdf_icon

BFY19

HiRel NPN Silicon RF Transistor BFY 193Features HiRel Discrete and Microwave Semiconductor For low noise, high gain broadband amplifiers up to2 GHz. For linear broadband amplifiers Hermetically sealed microwave package fT = 8 GHz, F = 2.3 dB at 2 GHz qualifiedMicro-X1 ESA/SCC Detail Spec. No.: 5611/006ESD: Electrostatic discharge sensitive device, observe han

 0.2. Size:120K  siemens
 bfy196.pdf pdf_icon

BFY19

HiRel NPN Silicon RF Transistor BFY 196Features HiRel Discrete and Microwave Semiconductor For low noise, high gain amplifiers up to 2 GHz. For linear broadband amplifiers Hermetically sealed microwave package fT = 6.5 GHz, F = 3 dB at 2 GHz ESA Qualification pendingMicro-X1ESD: Electrostatic discharge sensitive device, observe handling precautions!Type Marking O

Datasheet: 2SA1803O , 2SA1803R , 2SA1804 , 2SA1804O , 2SA1804R , 2SA1805 , 2SA1805O , 2SA1805R , TIP31 , 2SA181 , 2SA1810 , 2SA1810B , 2SA1810C , 2SA1811 , 2SA1815 , 2SA1815-3 , 2SA1815-4 .

History: 2SD897A | 2T6551 | RCA6340 | PMST2222A | DDA142JH | AD541 | KT3140D

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