BFY28 Datasheet and Replacement
Type Designator: BFY28
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 0.3 W
Maximum Collector-Base Voltage |Vcb|: 30 V
Maximum Collector-Emitter Voltage |Vce|: 30 V
Maximum Emitter-Base Voltage |Veb|: 6 V
Maximum Collector Current |Ic max|: 0.2 A
Max. Operating Junction Temperature (Tj): 150 °C
Transition Frequency (ft): 300 MHz
Collector Capacitance (Cc): 4 pF
Forward Current Transfer Ratio (hFE), MIN: 50
Noise Figure, dB: -
Package: TO18
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BFY28 Datasheet (PDF)
bfy280.pdf

HiRel NPN Silicon RF Transistor BFY 280Features HiRel Discrete and Microwave Semiconductor For low noise, low power amplifiers at collectorcurrents from 0.2 mA to 8 mA Hermetically sealed microwave package fT = 7.2 GHz, F = 2.5 dB at 2 GHz qualified ESA/SCC Detail Spec. No.: 5611/006Micro-X1ESD: Electrostatic discharge sensitive device, observe handling precautio
Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .
History: 3DG5088 | LDTC124XET1G | BCP52-10 | NSTB1005DXV5 | MMS8550 | 2N6122 | UN9110S
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History: 3DG5088 | LDTC124XET1G | BCP52-10 | NSTB1005DXV5 | MMS8550 | 2N6122 | UN9110S



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