BFY28 Datasheet, Equivalent, Cross Reference Search
Type Designator: BFY28
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 0.3 W
Maximum Collector-Base Voltage |Vcb|: 30 V
Maximum Collector-Emitter Voltage |Vce|: 30 V
Maximum Emitter-Base Voltage |Veb|: 6 V
Maximum Collector Current |Ic max|: 0.2 A
Max. Operating Junction Temperature (Tj): 150 °C
Transition Frequency (ft): 300 MHz
Collector Capacitance (Cc): 4 pF
Forward Current Transfer Ratio (hFE), MIN: 50
Noise Figure, dB: -
Package: TO18
BFY28 Transistor Equivalent Substitute - Cross-Reference Search
BFY28 Datasheet (PDF)
0.1. Size:121K siemens
bfy280.pdf
bfy280.pdf
HiRel NPN Silicon RF Transistor BFY 280Features HiRel Discrete and Microwave Semiconductor For low noise, low power amplifiers at collectorcurrents from 0.2 mA to 8 mA Hermetically sealed microwave package fT = 7.2 GHz, F = 2.5 dB at 2 GHz qualified ESA/SCC Detail Spec. No.: 5611/006Micro-X1ESD: Electrostatic discharge sensitive device, observe handling precautio
Datasheet: 2N3192 , 2N3193 , 2N3194 , 2N3195 , 2N3196 , 2N3197 , 2N3198 , 2N3199 , BC327 , 2N320 , 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 .
