All Transistors. BFY28 Datasheet

 

BFY28 Datasheet and Replacement


   Type Designator: BFY28
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 0.3 W
   Maximum Collector-Base Voltage |Vcb|: 30 V
   Maximum Collector-Emitter Voltage |Vce|: 30 V
   Maximum Emitter-Base Voltage |Veb|: 6 V
   Maximum Collector Current |Ic max|: 0.2 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Transition Frequency (ft): 300 MHz
   Collector Capacitance (Cc): 4 pF
   Forward Current Transfer Ratio (hFE), MIN: 50
   Noise Figure, dB: -
   Package: TO18

 BFY28 Transistor Equivalent Substitute - Cross-Reference Search

   

BFY28 Datasheet (PDF)

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BFY28

HiRel NPN Silicon RF Transistor BFY 280 Features HiRel Discrete and Microwave Semiconductor For low noise, low power amplifiers at collector currents from 0.2 mA to 8 mA Hermetically sealed microwave package fT = 7.2 GHz, F = 2.5 dB at 2 GHz qualified ESA/SCC Detail Spec. No. 5611/006 Micro-X1 ESD Electrostatic discharge sensitive device, observe handling precautio... See More ⇒

Datasheet: BFY20 , BFY21 , BFY22 , BFY23 , BFY23A , BFY24 , BFY25 , BFY27 , TIP32C , BFY29 , BFY30 , BFY31 , BFY33 , BFY34 , BFY37 , BFY37I , BFY39 .

History: PJ2N9014CT | AC178 | NB213XH | 2SB1197-R | CHEMB4GP | 2SC4592 | 2SC4715

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