2N3117 Datasheet, Equivalent, Cross Reference Search
Type Designator: 2N3117
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 0.36 W
Maximum Collector-Base Voltage |Vcb|: 60 V
Maximum Collector-Emitter Voltage |Vce|: 60 V
Maximum Emitter-Base Voltage |Veb|: 6 V
Maximum Collector Current |Ic max|: 0.05 A
Max. Operating Junction Temperature (Tj): 175 °C
Transition Frequency (ft): 60 MHz
Collector Capacitance (Cc): 4.5 pF
Forward Current Transfer Ratio (hFE), MIN: 250
Noise Figure, dB: -
Package: TO18
2N3117 Transistor Equivalent Substitute - Cross-Reference Search
2N3117 Datasheet (PDF)
9.3. Size:144K semelab
2n3114csm.pdf
2n3114csm.pdf
SILICON PLANAR EPITAXIAL NPN TRANSISTOR 2N3114CSM High Voltage Hermetic Ceramic Surface Mount Package Designed For Low Noise General Purpose Amplifiers, Driver Stages and Signal Processing Applications Screening Options Available ABSOLUTE MAXIMUM RATINGS (TA = 25C unless otherwise stated) VCBO Collector Base Voltage 150V VCEO Collector Emitter V
Datasheet: 2N3109 , 2N311 , 2N3110 , 2N3110S , 2N3114 , 2N3114S , 2N3115 , 2N3116 , TIP31C , 2N3118 , 2N3119 , 2N312 , 2N3120 , 2N3121 , 2N3122 , 2N3123 , 2N3124 .
