All Transistors. BLT50 Datasheet

 

BLT50 Datasheet and Replacement


   Type Designator: BLT50
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 2 W
   Maximum Collector-Base Voltage |Vcb|: 20 V
   Maximum Collector-Emitter Voltage |Vce|: 10 V
   Maximum Collector Current |Ic max|: 0.5 A
   Max. Operating Junction Temperature (Tj): 175 °C
   Forward Current Transfer Ratio (hFE), MIN: 25
   Noise Figure, dB: -
   Package: SOT223
 

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BLT50 Datasheet (PDF)

 ..1. Size:57K  philips
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BLT50

DISCRETE SEMICONDUCTORSDATA SHEETBLT50UHF power transistorApril 1991Product specificationPhilips Semiconductors Product specificationUHF power transistor BLT50FEATURES QUICK REFERENCE DATARF performance at Ts 60 C in a common emitter class-B test circuit SMD encapsulation(note 1). Gold metallization ensuresexcellent reliability. MODE OF OPERATION f (MHz) V

Datasheet: BFY91 , BFY92 , BFY94 , BFY95 , BFY99 , BFYP99 , BFZ10 , BJ1A , S9018 , BLT80 , BLT90 , BLT90-SL , BLT91 , BLT91-SL , BLT92 , BLT92-SL , BLT93-SL .

History: 2SC2592 | 2SB566 | BLT80 | 2SC3313 | DTA043XUB | 2SC3259 | HB123D

Keywords - BLT50 transistor datasheet

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