BLT50 Datasheet, Equivalent, Cross Reference Search
Type Designator: BLT50
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 2 W
Maximum Collector-Base Voltage |Vcb|: 20 V
Maximum Collector-Emitter Voltage |Vce|: 10 V
Maximum Collector Current |Ic max|: 0.5 A
Max. Operating Junction Temperature (Tj): 175 °C
Forward Current Transfer Ratio (hFE), MIN: 25
Noise Figure, dB: -
Package: SOT223
BLT50 Transistor Equivalent Substitute - Cross-Reference Search
BLT50 Datasheet (PDF)
..1. Size:57K philips
blt50.pdf
blt50.pdf
DISCRETE SEMICONDUCTORSDATA SHEETBLT50UHF power transistorApril 1991Product specificationPhilips Semiconductors Product specificationUHF power transistor BLT50FEATURES QUICK REFERENCE DATARF performance at Ts 60 C in a common emitter class-B test circuit SMD encapsulation(note 1). Gold metallization ensuresexcellent reliability. MODE OF OPERATION f (MHz) V
Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .
