BLT50 Specs and Replacement
Type Designator: BLT50
Material of Transistor: Si
Polarity: NPN
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 2 W
Maximum Collector-Base Voltage |Vcb|: 20 V
Maximum Collector-Emitter Voltage |Vce|: 10 V
Maximum Collector Current |Ic max|: 0.5 A
Max. Operating Junction Temperature (Tj): 175 °C
Electrical Characteristics
Forward Current Transfer Ratio (hFE), MIN: 25
Package: SOT223
BLT50 Substitution
- BJT ⓘ Cross-Reference Search
BLT50 datasheet
DISCRETE SEMICONDUCTORS DATA SHEET BLT50 UHF power transistor April 1991 Product specification Philips Semiconductors Product specification UHF power transistor BLT50 FEATURES QUICK REFERENCE DATA RF performance at Ts 60 C in a common emitter class-B test circuit SMD encapsulation (note 1). Gold metallization ensures excellent reliability. MODE OF OPERATION f (MHz) V... See More ⇒
Detailed specifications: BFY91, BFY92, BFY94, BFY95, BFY99, BFYP99, BFZ10, BJ1A, D667, BLT80, BLT90, BLT90-SL, BLT91, BLT91-SL, BLT92, BLT92-SL, BLT93-SL
Keywords - BLT50 pdf specs
BLT50 cross reference
BLT50 equivalent finder
BLT50 pdf lookup
BLT50 substitution
BLT50 replacement
