All Transistors. BLV11 Datasheet

 

BLV11 Datasheet and Replacement


   Type Designator: BLV11
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 36 W
   Maximum Collector-Base Voltage |Vcb|: 36 V
   Maximum Collector-Emitter Voltage |Vce|: 18 V
   Maximum Emitter-Base Voltage |Veb|: 4 V
   Maximum Collector Current |Ic max|: 3 A
   Max. Operating Junction Temperature (Tj): 200 °C
   Transition Frequency (ft): 900 MHz
   Collector Capacitance (Cc): 32 pF
   Forward Current Transfer Ratio (hFE), MIN: 10
   Noise Figure, dB: -
   Package: M174
 

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BLV11 Datasheet (PDF)

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BLV11

DISCRETE SEMICONDUCTORSDATA SHEETBLV11VHF power transistorAugust 1986Product specificationPhilips Semiconductors Product specificationVHF power transistor BLV11It has a 3/8" flange envelope with aDESCRIPTIONceramic cap. All leads are isolatedN-P-N silicon planar epitaxialfrom the flange.transistor intended for use in class-A,B and C operated mobile, h.f. andv.h.f.

Datasheet: BLU51 , BLU52 , BLU53 , BLU60-12 , BLU97 , BLU98 , BLU99 , BLV10 , 13009 , BLV15-12 , BLV20 , BLV21 , BLV25 , BLV30 , BLV30-12 , BLV31 , BLV32 .

History: KT6112B | NB213E | KT6112V | MT0404 | C9013B-H | GES2369R

Keywords - BLV11 transistor datasheet

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