BLV11 Datasheet, Equivalent, Cross Reference Search
Type Designator: BLV11
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 36 W
Maximum Collector-Base Voltage |Vcb|: 36 V
Maximum Collector-Emitter Voltage |Vce|: 18 V
Maximum Emitter-Base Voltage |Veb|: 4 V
Maximum Collector Current |Ic max|: 3 A
Max. Operating Junction Temperature (Tj): 200 °C
Transition Frequency (ft): 900 MHz
Collector Capacitance (Cc): 32 pF
Forward Current Transfer Ratio (hFE), MIN: 10
Noise Figure, dB: -
Package: M174
BLV11 Transistor Equivalent Substitute - Cross-Reference Search
BLV11 Datasheet (PDF)
..1. Size:66K philips
blv11.pdf
blv11.pdf
DISCRETE SEMICONDUCTORSDATA SHEETBLV11VHF power transistorAugust 1986Product specificationPhilips Semiconductors Product specificationVHF power transistor BLV11It has a 3/8" flange envelope with aDESCRIPTIONceramic cap. All leads are isolatedN-P-N silicon planar epitaxialfrom the flange.transistor intended for use in class-A,B and C operated mobile, h.f. andv.h.f.
Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .
