BLV11 Specs and Replacement

Type Designator: BLV11

Material of Transistor: Si

Polarity: NPN

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 36 W

Maximum Collector-Base Voltage |Vcb|: 36 V

Maximum Collector-Emitter Voltage |Vce|: 18 V

Maximum Emitter-Base Voltage |Veb|: 4 V

Maximum Collector Current |Ic max|: 3 A

Max. Operating Junction Temperature (Tj): 200 °C

Electrical Characteristics

Transition Frequency (ft): 900 MHz

Collector Capacitance (Cc): 32 pF

Forward Current Transfer Ratio (hFE), MIN: 10

Noise Figure, dB: -

Package: M174

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BLV11 datasheet

 ..1. Size:66K  philips

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BLV11

DISCRETE SEMICONDUCTORS DATA SHEET BLV11 VHF power transistor August 1986 Product specification Philips Semiconductors Product specification VHF power transistor BLV11 It has a 3/8" flange envelope with a DESCRIPTION ceramic cap. All leads are isolated N-P-N silicon planar epitaxial from the flange. transistor intended for use in class-A, B and C operated mobile, h.f. and v.h.f.... See More ⇒

Detailed specifications: BLU51, BLU52, BLU53, BLU60-12, BLU97, BLU98, BLU99, BLV10, TIP3055, BLV15-12, BLV20, BLV21, BLV25, BLV30, BLV30-12, BLV31, BLV32

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