BLV25 Specs and Replacement
Type Designator: BLV25
Material of Transistor: Si
Polarity: NPN
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 220 W
Maximum Collector-Base Voltage |Vcb|: 65 V
Maximum Collector-Emitter Voltage |Vce|: 33 V
Maximum Collector Current |Ic max|: 17 A
Max. Operating Junction Temperature (Tj): 200 °C
Electrical Characteristics
Transition Frequency (ft): 600 MHz
Forward Current Transfer Ratio (hFE), MIN: 15
Package: XM5
BLV25 Substitution
- BJT ⓘ Cross-Reference Search
BLV25 datasheet
DISCRETE SEMICONDUCTORS DATA SHEET BLV25 VHF power transistor August 1986 Product specification Philips Semiconductors Product specification VHF power transistor BLV25 DESCRIPTION FEATURES N-P-N silicon planar epitaxial internally matched input for transistor primarily for use in wideband operation and high v.h.f.-f.m. broadcast transmitters. power gain; multi-base structur... See More ⇒
Detailed specifications: BLU97, BLU98, BLU99, BLV10, BLV11, BLV15-12, BLV20, BLV21, 13009, BLV30, BLV30-12, BLV31, BLV32, BLV32F, BLV33, BLV33F, BLV34
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