BLV25 Datasheet, Equivalent, Cross Reference Search
Type Designator: BLV25
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 220 W
Maximum Collector-Base Voltage |Vcb|: 65 V
Maximum Collector-Emitter Voltage |Vce|: 33 V
Maximum Collector Current |Ic max|: 17 A
Max. Operating Junction Temperature (Tj): 200 °C
Transition Frequency (ft): 600 MHz
Forward Current Transfer Ratio (hFE), MIN: 15
Noise Figure, dB: -
Package: XM5
BLV25 Transistor Equivalent Substitute - Cross-Reference Search
BLV25 Datasheet (PDF)
..1. Size:68K philips
blv25.pdf
blv25.pdf
DISCRETE SEMICONDUCTORSDATA SHEETBLV25VHF power transistorAugust 1986Product specificationPhilips Semiconductors Product specificationVHF power transistor BLV25DESCRIPTION FEATURESN-P-N silicon planar epitaxial internally matched input fortransistor primarily for use in wideband operation and highv.h.f.-f.m. broadcast transmitters. power gain; multi-base structur
Datasheet: 2SA1803O , 2SA1803R , 2SA1804 , 2SA1804O , 2SA1804R , 2SA1805 , 2SA1805O , 2SA1805R , TIP42 , 2SA181 , 2SA1810 , 2SA1810B , 2SA1810C , 2SA1811 , 2SA1815 , 2SA1815-3 , 2SA1815-4 .
