BLV33F Specs and Replacement
Type Designator: BLV33F
Material of Transistor: Si
Polarity: NPN
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 132 W
Maximum Collector-Base Voltage |Vcb|: 65 V
Maximum Collector-Emitter Voltage |Vce|: 33 V
Maximum Emitter-Base Voltage |Veb|: 4 V
Maximum Collector Current |Ic max|: 12 A
Max. Operating Junction Temperature (Tj): 200 °C
Electrical Characteristics
Transition Frequency (ft): 700 MHz
Collector Capacitance (Cc): 150 pF
Forward Current Transfer Ratio (hFE), MIN: 15
Package: XM5
BLV33F Substitution
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BLV33F datasheet
DISCRETE SEMICONDUCTORS DATA SHEET BLV33F VHF linear power transistor 1996 Oct 10 Product specification Philips Semiconductors Product specification VHF linear power transistor BLV33F FEATURES PINNING - SOT119A Internally matched input for wideband operation and PIN SYMBOL DESCRIPTION high power gain 1 e emitter Diffused emitter ballasting resistors for an optimum 2 e emi... See More ⇒
DISCRETE SEMICONDUCTORS DATA SHEET BLV33 VHF linear power transistor 1996 Oct 10 Product specification Supersedes data of November 1995 Philips Semiconductors Product specification VHF linear power transistor BLV33 FEATURES PINNING - SOT147 Diffused emitter ballasting resistors for an optimum PIN SYMBOL DESCRIPTION temperature profile 1 c collector Gold sandwich metalliza... See More ⇒
Detailed specifications: BLV21, BLV25, BLV30, BLV30-12, BLV31, BLV32, BLV32F, BLV33, 2SD1047, BLV34, BLV34F, BLV36, BLV37, BLV45, BLV45-12, BLV45A, BLV57
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