BLV45 Specs and Replacement
Type Designator: BLV45
Material of Transistor: Si
Polarity: NPN
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 120 W
Maximum Collector-Emitter Voltage |Vce|: 36 V
Maximum Emitter-Base Voltage |Veb|: 4 V
Maximum Collector Current |Ic max|: 9 A
Max. Operating Junction Temperature (Tj): 175 °C
Electrical Characteristics
Transition Frequency (ft): 175 MHz
Forward Current Transfer Ratio (hFE), MIN: 10
Package: M111
BLV45 Substitution
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BLV45 datasheet
DISCRETE SEMICONDUCTORS DATA SHEET BLV45/12 VHF power transistor August 1986 Product specification Philips Semiconductors Product specification VHF power transistor BLV45/12 DESCRIPTION FEATURES N-P-N silicon planar epitaxial multi-base structure and transistor primarily intended for use in emitter-ballasting resistors for an mobile radio transmitters in the optimum temperature ... See More ⇒
DISCRETE SEMICONDUCTORS DATA SHEET BLV45/12 VHF power transistor August 1986 Product specification Philips Semiconductors Product specification VHF power transistor BLV45/12 DESCRIPTION FEATURES N-P-N silicon planar epitaxial multi-base structure and transistor primarily intended for use in emitter-ballasting resistors for an mobile radio transmitters in the optimum temperature ... See More ⇒
Detailed specifications: BLV32, BLV32F, BLV33, BLV33F, BLV34, BLV34F, BLV36, BLV37, S8550, BLV45-12, BLV45A, BLV57, BLV59, BLV75-12, BLV80-28, BLV90, BLV90-SL
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