BLV45 Datasheet, Equivalent, Cross Reference Search
Type Designator: BLV45
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 120 W
Maximum Collector-Emitter Voltage |Vce|: 36 V
Maximum Emitter-Base Voltage |Veb|: 4 V
Maximum Collector Current |Ic max|: 9 A
Max. Operating Junction Temperature (Tj): 175 °C
Transition Frequency (ft): 175 MHz
Forward Current Transfer Ratio (hFE), MIN: 10
Noise Figure, dB: -
Package: M111
BLV45 Transistor Equivalent Substitute - Cross-Reference Search
BLV45 Datasheet (PDF)
blv45.pdf
DISCRETE SEMICONDUCTORSDATA SHEETBLV45/12VHF power transistorAugust 1986Product specificationPhilips Semiconductors Product specificationVHF power transistor BLV45/12DESCRIPTION FEATURESN-P-N silicon planar epitaxial multi-base structure andtransistor primarily intended for use in emitter-ballasting resistors for anmobile radio transmitters in the optimum temperature
blv4512 cnv 2.pdf
DISCRETE SEMICONDUCTORSDATA SHEETBLV45/12VHF power transistorAugust 1986Product specificationPhilips Semiconductors Product specificationVHF power transistor BLV45/12DESCRIPTION FEATURESN-P-N silicon planar epitaxial multi-base structure andtransistor primarily intended for use in emitter-ballasting resistors for anmobile radio transmitters in the optimum temperature
Datasheet: 2N3192 , 2N3193 , 2N3194 , 2N3195 , 2N3196 , 2N3197 , 2N3198 , 2N3199 , BC327 , 2N320 , 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 .
