BLV59 Specs and Replacement

Type Designator: BLV59

Material of Transistor: Si

Polarity: NPN

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 30 W

Maximum Collector-Base Voltage |Vcb|: 50 V

Maximum Collector Current |Ic max|: 3 A

Max. Operating Junction Temperature (Tj): 175 °C

Electrical Characteristics

Transition Frequency (ft): 860 MHz

Forward Current Transfer Ratio (hFE), MIN: 25

Noise Figure, dB: -

Package: SPECIAL

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BLV59 datasheet

 ..1. Size:84K  philips

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BLV59

DISCRETE SEMICONDUCTORS DATA SHEET M3D076 BLV59 UHF linear power transistor 1998 Jan 09 Product specification Supersedes data of March 1993 Philips Semiconductors Product specification UHF linear power transistor BLV59 FEATURES PINNING - SOT171A Internal input matching to achieve an optimum PIN SYMBOL DESCRIPTION wideband capability and high power gain 1 e emitter Emitte... See More ⇒

Detailed specifications: BLV34, BLV34F, BLV36, BLV37, BLV45, BLV45-12, BLV45A, BLV57, BD335, BLV75-12, BLV80-28, BLV90, BLV90-SL, BLV91, BLV91-SL, BLV92, BLV93

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