BLV59 Datasheet and Replacement
Type Designator: BLV59
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 30 W
Maximum Collector-Base Voltage |Vcb|: 50 V
Maximum Collector Current |Ic max|: 3 A
Max. Operating Junction Temperature (Tj): 175 °C
Transition Frequency (ft): 860 MHz
Forward Current Transfer Ratio (hFE), MIN: 25
Noise Figure, dB: -
Package: SPECIAL
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BLV59 Datasheet (PDF)
blv59.pdf

DISCRETE SEMICONDUCTORSDATA SHEETM3D076BLV59UHF linear power transistor1998 Jan 09Product specificationSupersedes data of March 1993Philips Semiconductors Product specificationUHF linear power transistor BLV59FEATURES PINNING - SOT171A Internal input matching to achieve an optimumPIN SYMBOL DESCRIPTIONwideband capability and high power gain1 e emitter Emitte
Datasheet: 2SA1803O , 2SA1803R , 2SA1804 , 2SA1804O , 2SA1804R , 2SA1805 , 2SA1805O , 2SA1805R , TIP31 , 2SA181 , 2SA1810 , 2SA1810B , 2SA1810C , 2SA1811 , 2SA1815 , 2SA1815-3 , 2SA1815-4 .
History: 2SA1288 | TTA006B | MMUN2241LT1G | MJ10001 | MMUN2240L | BC556C | CMST5087
Keywords - BLV59 transistor datasheet
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History: 2SA1288 | TTA006B | MMUN2241LT1G | MJ10001 | MMUN2240L | BC556C | CMST5087



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