All Transistors. BLV75-12 Datasheet

 

BLV75-12 Datasheet, Equivalent, Cross Reference Search


   Type Designator: BLV75-12
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 75 W
   Maximum Collector-Base Voltage |Vcb|: 36 V
   Maximum Collector Current |Ic max|: 15 A
   Max. Operating Junction Temperature (Tj): 200 °C
   Transition Frequency (ft): 175 MHz
   Forward Current Transfer Ratio (hFE), MIN: 50
   Noise Figure, dB: -
   Package: M111

 BLV75-12 Transistor Equivalent Substitute - Cross-Reference Search

   

BLV75-12 Datasheet (PDF)

 ..1. Size:71K  philips
 blv75-12 cnv 2.pdf

BLV75-12 BLV75-12

DISCRETE SEMICONDUCTORSDATA SHEETBLV75/12VHF power transistorAugust 1986Product specificationPhilips Semiconductors Product specificationVHF power transistor BLV75/12DESCRIPTION FEATURESN-P-N silicon planar epitaxial multi-base structure andtransistor primarily intended for use in emitter-ballasting resistors for anmobile radio transmitters in the optimum temperature

Datasheet: 2SA1771 , 2SA178 , 2SA1790 , 2SA1791 , 2SA1792 , 2SA1793 , 2SA1794 , 2SA1795 , BC557 , 2SA1799 , 2SA17H , 2SA18 , 2SA180 , 2SA1800 , 2SA1800O , 2SA1800R , 2SA1800Y .

 

 
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