All Transistors. BLV75-12 Datasheet

 

BLV75-12 Datasheet and Replacement


   Type Designator: BLV75-12
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 75 W
   Maximum Collector-Base Voltage |Vcb|: 36 V
   Maximum Collector Current |Ic max|: 15 A
   Max. Operating Junction Temperature (Tj): 200 °C
   Transition Frequency (ft): 175 MHz
   Forward Current Transfer Ratio (hFE), MIN: 50
   Noise Figure, dB: -
   Package: M111
 

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BLV75-12 Datasheet (PDF)

 ..1. Size:71K  philips
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BLV75-12

DISCRETE SEMICONDUCTORSDATA SHEETBLV75/12VHF power transistorAugust 1986Product specificationPhilips Semiconductors Product specificationVHF power transistor BLV75/12DESCRIPTION FEATURESN-P-N silicon planar epitaxial multi-base structure andtransistor primarily intended for use in emitter-ballasting resistors for anmobile radio transmitters in the optimum temperature

Datasheet: BLV34F , BLV36 , BLV37 , BLV45 , BLV45-12 , BLV45A , BLV57 , BLV59 , B772 , BLV80-28 , BLV90 , BLV90-SL , BLV91 , BLV91-SL , BLV92 , BLV93 , BLV94 .

History: 2SC1242A | CL152-4C | P216A | DTC709 | MP505 | BDW74A | RN1110ACT

Keywords - BLV75-12 transistor datasheet

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