BLV75-12 Specs and Replacement

Type Designator: BLV75-12

Material of Transistor: Si

Polarity: NPN

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 75 W

Maximum Collector-Base Voltage |Vcb|: 36 V

Maximum Collector Current |Ic max|: 15 A

Max. Operating Junction Temperature (Tj): 200 °C

Electrical Characteristics

Transition Frequency (ft): 175 MHz

Forward Current Transfer Ratio (hFE), MIN: 50

Noise Figure, dB: -

Package: M111

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BLV75-12 datasheet

 ..1. Size:71K  philips

 blv75-12 cnv 2.pdf pdf_icon

BLV75-12

DISCRETE SEMICONDUCTORS DATA SHEET BLV75/12 VHF power transistor August 1986 Product specification Philips Semiconductors Product specification VHF power transistor BLV75/12 DESCRIPTION FEATURES N-P-N silicon planar epitaxial multi-base structure and transistor primarily intended for use in emitter-ballasting resistors for an mobile radio transmitters in the optimum temperature ... See More ⇒

Detailed specifications: BLV34F, BLV36, BLV37, BLV45, BLV45-12, BLV45A, BLV57, BLV59, A940, BLV80-28, BLV90, BLV90-SL, BLV91, BLV91-SL, BLV92, BLV93, BLV94

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