BLV80-28 Specs and Replacement

Type Designator: BLV80-28

Material of Transistor: Si

Polarity: NPN

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 116 W

Maximum Collector-Emitter Voltage |Vce|: 33 V

Maximum Emitter-Base Voltage |Veb|: 4 V

Maximum Collector Current |Ic max|: 8.5 A

Max. Operating Junction Temperature (Tj): 200 °C

Electrical Characteristics

Transition Frequency (ft): 600 MHz

Forward Current Transfer Ratio (hFE), MIN: 15

Noise Figure, dB: -

Package: M174

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BLV80-28 datasheet

 9.1. Size:257K  hgsemi

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BLV80-28

HG RF POWER TRANSISTOR BLV80-28 Semiconductors HG ROHS Compliance,Silicon NPN POWER TRANSISTOR DESCRIPTION PACKAGE STYLE .500 4L FLG The BLV80-28 is Designed for 28 Volt Class C VHF Power AmplifierApplications up to 175 MHz. FEATURES = 65 % min. at 80 W/175 MHz C PG = 6.5 dB min. at 80 W/175 MHz Omnigold Metalization System MAXIMUM RATINGS IC 9.0 A VCBO 65 V VCEO 35 V ... See More ⇒

Detailed specifications: BLV36, BLV37, BLV45, BLV45-12, BLV45A, BLV57, BLV59, BLV75-12, B772, BLV90, BLV90-SL, BLV91, BLV91-SL, BLV92, BLV93, BLV94, BLV95

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