All Transistors. BLV80-28 Datasheet

 

BLV80-28 Datasheet and Replacement


   Type Designator: BLV80-28
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 116 W
   Maximum Collector-Emitter Voltage |Vce|: 33 V
   Maximum Emitter-Base Voltage |Veb|: 4 V
   Maximum Collector Current |Ic max|: 8.5 A
   Max. Operating Junction Temperature (Tj): 200 °C
   Transition Frequency (ft): 600 MHz
   Forward Current Transfer Ratio (hFE), MIN: 15
   Noise Figure, dB: -
   Package: M174
 

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BLV80-28 Datasheet (PDF)

 9.1. Size:257K  hgsemi
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BLV80-28

HG RF POWER TRANSISTORBLV80-28SemiconductorsHGROHS Compliance,Silicon NPN POWER TRANSISTORDESCRIPTION:PACKAGE STYLE .500 4L FLGThe BLV80-28 is Designed for 28 VoltClass C VHF PowerAmplifierApplications up to 175 MHz.FEATURES: = 65 % min. at 80 W/175 MHz CPG = 6.5 dB min. at 80 W/175 MHzOmnigold Metalization SystemMAXIMUM RATINGSIC 9.0 AVCBO 65 VVCEO 35 V

Datasheet: BLV36 , BLV37 , BLV45 , BLV45-12 , BLV45A , BLV57 , BLV59 , BLV75-12 , S8550 , BLV90 , BLV90-SL , BLV91 , BLV91-SL , BLV92 , BLV93 , BLV94 , BLV95 .

History: GS111B | HBCA124ES6R

Keywords - BLV80-28 transistor datasheet

 BLV80-28 cross reference
 BLV80-28 equivalent finder
 BLV80-28 lookup
 BLV80-28 substitution
 BLV80-28 replacement

 

 
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