All Transistors. BLV91 Datasheet

 

BLV91 Datasheet and Replacement


   Type Designator: BLV91
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 2 W
   Maximum Collector-Base Voltage |Vcb|: 36 V
   Maximum Collector Current |Ic max|: 0.4 A
   Max. Operating Junction Temperature (Tj): 175 °C
   Transition Frequency (ft): 900 MHz
   Forward Current Transfer Ratio (hFE), MIN: 25
   Noise Figure, dB: -
   Package: TO128
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BLV91 Datasheet (PDF)

 0.1. Size:75K  philips
 blv910.pdf pdf_icon

BLV91

DISCRETE SEMICONDUCTORSDATA SHEETBLV910UHF power transistor1995 Apr 11Product specificationPhilips SemiconductorsPhilips Semiconductors Product specificationUHF power transistor BLV910FEATURES DESCRIPTION Internal input matching to achieve high power gain and NPN silicon planar epitaxial transistor intended foreasy design of wideband circuits common emitter class-AB op

 0.2. Size:55K  philips
 blv91sl cnv 2.pdf pdf_icon

BLV91

DISCRETE SEMICONDUCTORSDATA SHEETBLV91/SLUHF power transistorSeptember 1988Product specificationPhilips Semiconductors Product specificationUHF power transistor BLV91/SLDESCRIPTION FEATURESNPN silicon planar epitaxial transistor designed for use in diffused emitter-ballasting resistors for an optimummobile radio transmitters in the 900 MHz band. temperature profile.

Datasheet: 2SA1803O , 2SA1803R , 2SA1804 , 2SA1804O , 2SA1804R , 2SA1805 , 2SA1805O , 2SA1805R , TIP31 , 2SA181 , 2SA1810 , 2SA1810B , 2SA1810C , 2SA1811 , 2SA1815 , 2SA1815-3 , 2SA1815-4 .

History: KSA1241O | UN121D | LDTA115EET1G | KSA643Y | PHPT60406NY | KSA1614R | CS9011I

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