BLV91 Specs and Replacement

Type Designator: BLV91

Material of Transistor: Si

Polarity: NPN

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 2 W

Maximum Collector-Base Voltage |Vcb|: 36 V

Maximum Collector Current |Ic max|: 0.4 A

Max. Operating Junction Temperature (Tj): 175 °C

Electrical Characteristics

Transition Frequency (ft): 900 MHz

Forward Current Transfer Ratio (hFE), MIN: 25

Noise Figure, dB: -

Package: TO128

 BLV91 Substitution

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BLV91 datasheet

 0.1. Size:75K  philips

 blv910.pdf pdf_icon

BLV91

DISCRETE SEMICONDUCTORS DATA SHEET BLV910 UHF power transistor 1995 Apr 11 Product specification Philips Semiconductors Philips Semiconductors Product specification UHF power transistor BLV910 FEATURES DESCRIPTION Internal input matching to achieve high power gain and NPN silicon planar epitaxial transistor intended for easy design of wideband circuits common emitter class-AB op... See More ⇒

 0.2. Size:55K  philips

 blv91sl cnv 2.pdf pdf_icon

BLV91

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Detailed specifications: BLV45-12, BLV45A, BLV57, BLV59, BLV75-12, BLV80-28, BLV90, BLV90-SL, TIP35C, BLV91-SL, BLV92, BLV93, BLV94, BLV95, BLV97, BLV98, BLV99

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