BLV91-SL Datasheet, Equivalent, Cross Reference Search
Type Designator: BLV91-SL
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 2 W
Maximum Collector-Base Voltage |Vcb|: 36 V
Maximum Collector Current |Ic max|: 0.4 A
Max. Operating Junction Temperature (Tj): 175 °C
Transition Frequency (ft): 900 MHz
Forward Current Transfer Ratio (hFE), MIN: 25
Noise Figure, dB: -
Package: TO131
BLV91-SL Transistor Equivalent Substitute - Cross-Reference Search
BLV91-SL Datasheet (PDF)
blv910.pdf
DISCRETE SEMICONDUCTORSDATA SHEETBLV910UHF power transistor1995 Apr 11Product specificationPhilips SemiconductorsPhilips Semiconductors Product specificationUHF power transistor BLV910FEATURES DESCRIPTION Internal input matching to achieve high power gain and NPN silicon planar epitaxial transistor intended foreasy design of wideband circuits common emitter class-AB op
blv91sl cnv 2.pdf
DISCRETE SEMICONDUCTORSDATA SHEETBLV91/SLUHF power transistorSeptember 1988Product specificationPhilips Semiconductors Product specificationUHF power transistor BLV91/SLDESCRIPTION FEATURESNPN silicon planar epitaxial transistor designed for use in diffused emitter-ballasting resistors for an optimummobile radio transmitters in the 900 MHz band. temperature profile.
Datasheet: 2SA1179M4 , 2SA1179M5 , 2SA1179M6 , 2SA1179M7 , 2SA118 , 2SA1180 , 2SA1180A , 2SA1182 , BD777 , 2SA1182Y , 2SA1183 , 2SA1184 , 2SA1185 , 2SA1186 , 2SA1186O , 2SA1186P , 2SA1186Y .
History: GSTM882
