BLV92 Datasheet, Equivalent, Cross Reference Search
Type Designator: BLV92
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 4 W
Maximum Collector-Base Voltage |Vcb|: 36 V
Maximum Collector Current |Ic max|: 0.8 A
Max. Operating Junction Temperature (Tj): 175 °C
Transition Frequency (ft): 900 MHz
Forward Current Transfer Ratio (hFE), MIN: 25
Noise Figure, dB: -
Package: M118
BLV92 Transistor Equivalent Substitute - Cross-Reference Search
BLV92 Datasheet (PDF)
blv92.pdf
DISCRETE SEMICONDUCTORSDATA SHEETBLV92UHF power transistorMarch 1993Product specificationPhilips Semiconductors Product specificationUHF power transistor BLV92DESCRIPTION FEATURESN-P-N silicon planar epitaxial transistor primarily intended multi-base structure and emitter-ballasting resistors forfor use in mobile radio transmitters in the 900 MHz an optimum temperature
blv920.pdf
DISCRETE SEMICONDUCTORSDATA SHEETM3D076BLV920UHF power transistor1997 Nov 17Product specificationSupersedes data of 1995 Apr 10Philips Semiconductors Product specificationUHF power transistor BLV920FEATURES DESCRIPTION Internal input matching to achieve high power gain and NPN silicon planar epitaxial transistor intended foreasy design of wideband circuits common emi
Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .
