BLV92 Specs and Replacement

Type Designator: BLV92

Material of Transistor: Si

Polarity: NPN

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 4 W

Maximum Collector-Base Voltage |Vcb|: 36 V

Maximum Collector Current |Ic max|: 0.8 A

Max. Operating Junction Temperature (Tj): 175 °C

Electrical Characteristics

Transition Frequency (ft): 900 MHz

Forward Current Transfer Ratio (hFE), MIN: 25

Noise Figure, dB: -

Package: M118

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BLV92 datasheet

 ..1. Size:63K  philips

 blv92.pdf pdf_icon

BLV92

DISCRETE SEMICONDUCTORS DATA SHEET BLV92 UHF power transistor March 1993 Product specification Philips Semiconductors Product specification UHF power transistor BLV92 DESCRIPTION FEATURES N-P-N silicon planar epitaxial transistor primarily intended multi-base structure and emitter-ballasting resistors for for use in mobile radio transmitters in the 900 MHz an optimum temperature ... See More ⇒

 0.1. Size:89K  philips

 blv920.pdf pdf_icon

BLV92

DISCRETE SEMICONDUCTORS DATA SHEET M3D076 BLV920 UHF power transistor 1997 Nov 17 Product specification Supersedes data of 1995 Apr 10 Philips Semiconductors Product specification UHF power transistor BLV920 FEATURES DESCRIPTION Internal input matching to achieve high power gain and NPN silicon planar epitaxial transistor intended for easy design of wideband circuits common emi... See More ⇒

Detailed specifications: BLV57, BLV59, BLV75-12, BLV80-28, BLV90, BLV90-SL, BLV91, BLV91-SL, 8050, BLV93, BLV94, BLV95, BLV97, BLV98, BLV99, BLW10, BLW11

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