All Transistors. BLV92 Datasheet

 

BLV92 Datasheet and Replacement


   Type Designator: BLV92
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 4 W
   Maximum Collector-Base Voltage |Vcb|: 36 V
   Maximum Collector Current |Ic max|: 0.8 A
   Max. Operating Junction Temperature (Tj): 175 °C
   Transition Frequency (ft): 900 MHz
   Forward Current Transfer Ratio (hFE), MIN: 25
   Noise Figure, dB: -
   Package: M118
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BLV92 Datasheet (PDF)

 ..1. Size:63K  philips
 blv92.pdf pdf_icon

BLV92

DISCRETE SEMICONDUCTORSDATA SHEETBLV92UHF power transistorMarch 1993Product specificationPhilips Semiconductors Product specificationUHF power transistor BLV92DESCRIPTION FEATURESN-P-N silicon planar epitaxial transistor primarily intended multi-base structure and emitter-ballasting resistors forfor use in mobile radio transmitters in the 900 MHz an optimum temperature

 0.1. Size:89K  philips
 blv920.pdf pdf_icon

BLV92

DISCRETE SEMICONDUCTORSDATA SHEETM3D076BLV920UHF power transistor1997 Nov 17Product specificationSupersedes data of 1995 Apr 10Philips Semiconductors Product specificationUHF power transistor BLV920FEATURES DESCRIPTION Internal input matching to achieve high power gain and NPN silicon planar epitaxial transistor intended foreasy design of wideband circuits common emi

Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .

History: CTP1732 | MJ11016G | 2SC3489 | DTA114TMFHA | RT2P01M | CP502 | 2SC2547

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