BLV95 Specs and Replacement

Type Designator: BLV95

Material of Transistor: Si

Polarity: NPN

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 25 W

Maximum Collector-Base Voltage |Vcb|: 36 V

Maximum Collector Current |Ic max|: 5 A

Max. Operating Junction Temperature (Tj): 200 °C

Electrical Characteristics

Transition Frequency (ft): 900 MHz

Forward Current Transfer Ratio (hFE), MIN: 25

Noise Figure, dB: -

Package: M118

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BLV95 datasheet

 0.1. Size:97K  philips

 blv958 fl 5.pdf pdf_icon

BLV95

DISCRETE SEMICONDUCTORS DATA SHEET BLV958; BLV958FL UHF power transistors Product specification 2000 Nov 02 Supersedes data of 2000 Jan 12 Philips Semiconductors Product specification UHF power transistors BLV958; BLV958FL FEATURES DESCRIPTION Internal input and output matching for easy matching, NPN silicon planar epitaxial transistors primarily intended high gain and efficiency... See More ⇒

 0.2. Size:109K  philips

 blv950.pdf pdf_icon

BLV95

DISCRETE SEMICONDUCTORS DATA SHEET BLV950 UHF push-pull power transistor 1997 Oct 27 Product specification Supersedes data of 1996 Jan 26 Philips Semiconductors Product specification UHF push-pull power transistor BLV950 FEATURES PINNING - SOT262A2 Internal input and output matching for easy matching, PIN SYMBOL DESCRIPTION high gain and efficiency 1 c1 collector 1 Poly-s... See More ⇒

Detailed specifications: BLV80-28, BLV90, BLV90-SL, BLV91, BLV91-SL, BLV92, BLV93, BLV94, TIP127, BLV97, BLV98, BLV99, BLW10, BLW11, BLW12, BLW13, BLW14

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