BLV95 Datasheet, Equivalent, Cross Reference Search
Type Designator: BLV95
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 25 W
Maximum Collector-Base Voltage |Vcb|: 36 V
Maximum Collector Current |Ic max|: 5 A
Max. Operating Junction Temperature (Tj): 200 °C
Transition Frequency (ft): 900 MHz
Forward Current Transfer Ratio (hFE), MIN: 25
Noise Figure, dB: -
Package: M118
BLV95 Transistor Equivalent Substitute - Cross-Reference Search
BLV95 Datasheet (PDF)
blv958 fl 5.pdf
DISCRETE SEMICONDUCTORSDATA SHEETBLV958; BLV958FLUHF power transistorsProduct specification 2000 Nov 02Supersedes data of 2000 Jan 12Philips Semiconductors Product specificationUHF power transistors BLV958; BLV958FLFEATURES DESCRIPTION Internal input and output matching for easy matching, NPN silicon planar epitaxial transistors primarily intendedhigh gain and efficiency
blv950.pdf
DISCRETE SEMICONDUCTORSDATA SHEETBLV950UHF push-pull power transistor1997 Oct 27Product specificationSupersedes data of 1996 Jan 26Philips Semiconductors Product specificationUHF push-pull power transistor BLV950FEATURES PINNING - SOT262A2 Internal input and output matching for easy matching,PIN SYMBOL DESCRIPTIONhigh gain and efficiency1 c1 collector 1 Poly-s
Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .
