All Transistors. BLV97 Datasheet

 

BLV97 Datasheet and Replacement


   Type Designator: BLV97
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 30 W
   Maximum Collector-Base Voltage |Vcb|: 50 V
   Maximum Collector Current |Ic max|: 3 A
   Max. Operating Junction Temperature (Tj): 200 °C
   Transition Frequency (ft): 900 MHz
   Forward Current Transfer Ratio (hFE), MIN: 25
   Noise Figure, dB: -
   Package: M118
 
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BLV97 Datasheet (PDF)

 0.1. Size:65K  philips
 blv97ce.pdf pdf_icon

BLV97

DISCRETE SEMICONDUCTORSDATA SHEETBLV97CEUHF power transistorMarch 1993Product specificationPhilips Semiconductors Product specificationUHF power transistor BLV97CEFEATURES DESCRIPTION Internal input matching to achieve high power gain NPN silicon planar epitaxial transistor in a SOT171envelope, intended for common emitter, class-AB Ballasting resistors for an optimu

 0.2. Size:135K  njs
 blv97ce.pdf pdf_icon

BLV97

Datasheet: BLV90 , BLV90-SL , BLV91 , BLV91-SL , BLV92 , BLV93 , BLV94 , BLV95 , BC558 , BLV98 , BLV99 , BLW10 , BLW11 , BLW12 , BLW13 , BLW14 , BLW15 .

History: BDX67L | CV7396A

Keywords - BLV97 transistor datasheet

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