BLV97 Specs and Replacement

Type Designator: BLV97

Material of Transistor: Si

Polarity: NPN

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 30 W

Maximum Collector-Base Voltage |Vcb|: 50 V

Maximum Collector Current |Ic max|: 3 A

Max. Operating Junction Temperature (Tj): 200 °C

Electrical Characteristics

Transition Frequency (ft): 900 MHz

Forward Current Transfer Ratio (hFE), MIN: 25

Noise Figure, dB: -

Package: M118

 BLV97 Substitution

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BLV97 datasheet

 0.1. Size:65K  philips

 blv97ce.pdf pdf_icon

BLV97

DISCRETE SEMICONDUCTORS DATA SHEET BLV97CE UHF power transistor March 1993 Product specification Philips Semiconductors Product specification UHF power transistor BLV97CE FEATURES DESCRIPTION Internal input matching to achieve high power gain NPN silicon planar epitaxial transistor in a SOT171 envelope, intended for common emitter, class-AB Ballasting resistors for an optimu... See More ⇒

 0.2. Size:135K  njs

 blv97ce.pdf pdf_icon

BLV97

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Detailed specifications: BLV90, BLV90-SL, BLV91, BLV91-SL, BLV92, BLV93, BLV94, BLV95, 2SD313, BLV98, BLV99, BLW10, BLW11, BLW12, BLW13, BLW14, BLW15

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