All Transistors. BLW29 Datasheet

 

BLW29 Datasheet and Replacement


   Type Designator: BLW29
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 53 W
   Maximum Collector-Base Voltage |Vcb|: 36 V
   Maximum Collector-Emitter Voltage |Vce|: 18 V
   Maximum Emitter-Base Voltage |Veb|: 4 V
   Maximum Collector Current |Ic max|: 8 A
   Max. Operating Junction Temperature (Tj): 200 °C
   Transition Frequency (ft): 450 MHz
   Collector Capacitance (Cc): 80 pF
   Forward Current Transfer Ratio (hFE), MIN: 10
   Noise Figure, dB: -
   Package: TO128
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BLW29 Datasheet (PDF)

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BLW29

DISCRETE SEMICONDUCTORSDATA SHEETBLW29VHF power transistorAugust 1986Product specificationPhilips Semiconductors Product specificationVHF power transistor BLW29the chain can deliver 15 W with aDESCRIPTIONmaximum drive power of 120 mW atN-P-N silicon planar epitaxial175 MHz. The transistor is resistancetransistor intended for use in class-A,stabilized and is guarante

Datasheet: 2SA1803O , 2SA1803R , 2SA1804 , 2SA1804O , 2SA1804R , 2SA1805 , 2SA1805O , 2SA1805R , TIP31 , 2SA181 , 2SA1810 , 2SA1810B , 2SA1810C , 2SA1811 , 2SA1815 , 2SA1815-3 , 2SA1815-4 .

History: KSA1241O | KRC657F | PHPT60406NY | KSA643Y | CS9011I | LBC857CWT1G | LDTA115EET1G

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