BLW29 Specs and Replacement
Type Designator: BLW29
Material of Transistor: Si
Polarity: NPN
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 53 W
Maximum Collector-Base Voltage |Vcb|: 36 V
Maximum Collector-Emitter Voltage |Vce|: 18 V
Maximum Emitter-Base Voltage |Veb|: 4 V
Maximum Collector Current |Ic max|: 8 A
Max. Operating Junction Temperature (Tj): 200 °C
Electrical Characteristics
Transition Frequency (ft): 450 MHz
Collector Capacitance (Cc): 80 pF
Forward Current Transfer Ratio (hFE), MIN: 10
Package: TO128
BLW29 Substitution
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BLW29 datasheet
DISCRETE SEMICONDUCTORS DATA SHEET BLW29 VHF power transistor August 1986 Product specification Philips Semiconductors Product specification VHF power transistor BLW29 the chain can deliver 15 W with a DESCRIPTION maximum drive power of 120 mW at N-P-N silicon planar epitaxial 175 MHz. The transistor is resistance transistor intended for use in class-A, stabilized and is guarante... See More ⇒
Detailed specifications: BLW20, BLW21, BLW22, BLW23, BLW24, BLW25, BLW26, BLW27, 2SD669A, BLW31, BLW32, BLW33, BLW34, BLW35, BLW36, BLW37, BLW38
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