BLW32 Datasheet, Equivalent, Cross Reference Search
Type Designator: BLW32
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 10 W
Maximum Collector-Base Voltage |Vcb|: 50 V
Maximum Collector-Emitter Voltage |Vce|: 30 V
Maximum Emitter-Base Voltage |Veb|: 4 V
Maximum Collector Current |Ic max|: 0.65 A
Max. Operating Junction Temperature (Tj): 200 °C
Transition Frequency (ft): 3500 MHz
Collector Capacitance (Cc): 7 pF
Forward Current Transfer Ratio (hFE), MIN: 20
Noise Figure, dB: -
Package: TO128
BLW32 Transistor Equivalent Substitute - Cross-Reference Search
BLW32 Datasheet (PDF)
..1. Size:66K philips
blw32.pdf
blw32.pdf
DISCRETE SEMICONDUCTORSDATA SHEETBLW32UHF linear power transistorAugust 1986Product specificationPhilips Semiconductors Product specificationUHF linear power transistor BLW32area. The combination of optimumDESCRIPTIONthermal design and the application ofN-P-N silicon planar epitaxialgold sandwich metallizationtransistor primarily intended for use inrealizes excellen
Datasheet: 2N3192 , 2N3193 , 2N3194 , 2N3195 , 2N3196 , 2N3197 , 2N3198 , 2N3199 , 2SA1837 , 2N320 , 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 .
