All Transistors. BLW32 Datasheet

 

BLW32 Datasheet and Replacement


   Type Designator: BLW32
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 10 W
   Maximum Collector-Base Voltage |Vcb|: 50 V
   Maximum Collector-Emitter Voltage |Vce|: 30 V
   Maximum Emitter-Base Voltage |Veb|: 4 V
   Maximum Collector Current |Ic max|: 0.65 A
   Max. Operating Junction Temperature (Tj): 200 °C
   Transition Frequency (ft): 3500 MHz
   Collector Capacitance (Cc): 7 pF
   Forward Current Transfer Ratio (hFE), MIN: 20
   Noise Figure, dB: -
   Package: TO128
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BLW32 Datasheet (PDF)

 ..1. Size:66K  philips
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BLW32

DISCRETE SEMICONDUCTORSDATA SHEETBLW32UHF linear power transistorAugust 1986Product specificationPhilips Semiconductors Product specificationUHF linear power transistor BLW32area. The combination of optimumDESCRIPTIONthermal design and the application ofN-P-N silicon planar epitaxialgold sandwich metallizationtransistor primarily intended for use inrealizes excellen

Datasheet: 2N3192 , 2N3193 , 2N3194 , 2N3195 , 2N3196 , 2N3197 , 2N3198 , 2N3199 , MJE340 , 2N320 , 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 .

History: RN1909 | SK3182 | BD534A | BF479S | 2N1037 | NTE2547 | 2SC789R

Keywords - BLW32 transistor datasheet

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