BLW32 Datasheet and Replacement
Type Designator: BLW32
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 10 W
Maximum Collector-Base Voltage |Vcb|: 50 V
Maximum Collector-Emitter Voltage |Vce|: 30 V
Maximum Emitter-Base Voltage |Veb|: 4 V
Maximum Collector Current |Ic max|: 0.65 A
Max. Operating Junction Temperature (Tj): 200 °C
Transition Frequency (ft): 3500 MHz
Collector Capacitance (Cc): 7 pF
Forward Current Transfer Ratio (hFE), MIN: 20
Noise Figure, dB: -
Package: TO128
- BJT Cross-Reference Search
BLW32 Datasheet (PDF)
blw32.pdf

DISCRETE SEMICONDUCTORSDATA SHEETBLW32UHF linear power transistorAugust 1986Product specificationPhilips Semiconductors Product specificationUHF linear power transistor BLW32area. The combination of optimumDESCRIPTIONthermal design and the application ofN-P-N silicon planar epitaxialgold sandwich metallizationtransistor primarily intended for use inrealizes excellen
Datasheet: 2N3192 , 2N3193 , 2N3194 , 2N3195 , 2N3196 , 2N3197 , 2N3198 , 2N3199 , MJE340 , 2N320 , 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 .
History: RN1909 | SK3182 | BD534A | BF479S | 2N1037 | NTE2547 | 2SC789R
Keywords - BLW32 transistor datasheet
BLW32 cross reference
BLW32 equivalent finder
BLW32 lookup
BLW32 substitution
BLW32 replacement
History: RN1909 | SK3182 | BD534A | BF479S | 2N1037 | NTE2547 | 2SC789R



LIST
Last Update
BJT: GA1A4M | SBT42 | 2SA200-Y | 2SA200-O | 2SD882-Q | 2SD882-P | 2SD882-E | 2SC945-L | 2SC945-H | 2SC4226-R23 | 2SC3357-F | 2SC3357-E | 2SC3356-R26 | 2SC3356-R24 | 2SC3356-R23 | 2SB772-Q | 2SB772-P | 2SB772-E | 2SA1015-L | 2SA1015-H | HSS8550
Popular searches
2sc2291 | bc139 | 2sc1398 | 2sd218 | bc547 характеристики | me15n10-g | 2n2905 equivalent | 2sa640