BLW33 Datasheet, Equivalent, Cross Reference Search
Type Designator: BLW33
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 19 W
Maximum Collector-Base Voltage |Vcb|: 50 V
Maximum Collector-Emitter Voltage |Vce|: 30 V
Maximum Emitter-Base Voltage |Veb|: 4 V
Maximum Collector Current |Ic max|: 1.2 A
Max. Operating Junction Temperature (Tj): 200 °C
Transition Frequency (ft): 3400 MHz
Collector Capacitance (Cc): 12 pF
Forward Current Transfer Ratio (hFE), MIN: 20
Noise Figure, dB: -
Package: TO128
BLW33 Transistor Equivalent Substitute - Cross-Reference Search
BLW33 Datasheet (PDF)
..1. Size:66K philips
blw33.pdf
blw33.pdf
DISCRETE SEMICONDUCTORSDATA SHEETBLW33UHF linear power transistorAugust 1986Product specificationPhilips Semiconductors Product specificationUHF linear power transistor BLW33area. The combination of optimumDESCRIPTIONthermal design and the application ofN-P-N silicon planar epitaxialgold sandwich metallizationtransistor primarily intended for use inrealizes excellen
Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .
