All Transistors. BLW33 Datasheet

 

BLW33 Datasheet and Replacement


   Type Designator: BLW33
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 19 W
   Maximum Collector-Base Voltage |Vcb|: 50 V
   Maximum Collector-Emitter Voltage |Vce|: 30 V
   Maximum Emitter-Base Voltage |Veb|: 4 V
   Maximum Collector Current |Ic max|: 1.2 A
   Max. Operating Junction Temperature (Tj): 200 °C
   Transition Frequency (ft): 3400 MHz
   Collector Capacitance (Cc): 12 pF
   Forward Current Transfer Ratio (hFE), MIN: 20
   Noise Figure, dB: -
   Package: TO128
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BLW33 Datasheet (PDF)

 ..1. Size:66K  philips
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BLW33

DISCRETE SEMICONDUCTORSDATA SHEETBLW33UHF linear power transistorAugust 1986Product specificationPhilips Semiconductors Product specificationUHF linear power transistor BLW33area. The combination of optimumDESCRIPTIONthermal design and the application ofN-P-N silicon planar epitaxialgold sandwich metallizationtransistor primarily intended for use inrealizes excellen

Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .

History: 2N2845 | CIL768 | 2SC1288 | MD1133F | MMS8550 | 2N6067 | UN9110S

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