BLW33 Specs and Replacement
Type Designator: BLW33
Material of Transistor: Si
Polarity: NPN
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 19 W
Maximum Collector-Base Voltage |Vcb|: 50 V
Maximum Collector-Emitter Voltage |Vce|: 30 V
Maximum Emitter-Base Voltage |Veb|: 4 V
Maximum Collector Current |Ic max|: 1.2 A
Max. Operating Junction Temperature (Tj): 200 °C
Electrical Characteristics
Transition Frequency (ft): 3400 MHz
Collector Capacitance (Cc): 12 pF
Forward Current Transfer Ratio (hFE), MIN: 20
Package: TO128
BLW33 Substitution
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BLW33 datasheet
DISCRETE SEMICONDUCTORS DATA SHEET BLW33 UHF linear power transistor August 1986 Product specification Philips Semiconductors Product specification UHF linear power transistor BLW33 area. The combination of optimum DESCRIPTION thermal design and the application of N-P-N silicon planar epitaxial gold sandwich metallization transistor primarily intended for use in realizes excellen... See More ⇒
Detailed specifications: BLW23, BLW24, BLW25, BLW26, BLW27, BLW29, BLW31, BLW32, 2SC2240, BLW34, BLW35, BLW36, BLW37, BLW38, BLW39, BLW42, BLW43
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