All Transistors. BLW33 Datasheet

 

BLW33 Datasheet and Replacement


   Type Designator: BLW33
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 19 W
   Maximum Collector-Base Voltage |Vcb|: 50 V
   Maximum Collector-Emitter Voltage |Vce|: 30 V
   Maximum Emitter-Base Voltage |Veb|: 4 V
   Maximum Collector Current |Ic max|: 1.2 A
   Max. Operating Junction Temperature (Tj): 200 °C
   Transition Frequency (ft): 3400 MHz
   Collector Capacitance (Cc): 12 pF
   Forward Current Transfer Ratio (hFE), MIN: 20
   Noise Figure, dB: -
   Package: TO128
 

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BLW33 Datasheet (PDF)

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BLW33

DISCRETE SEMICONDUCTORSDATA SHEETBLW33UHF linear power transistorAugust 1986Product specificationPhilips Semiconductors Product specificationUHF linear power transistor BLW33area. The combination of optimumDESCRIPTIONthermal design and the application ofN-P-N silicon planar epitaxialgold sandwich metallizationtransistor primarily intended for use inrealizes excellen

Datasheet: BLW23 , BLW24 , BLW25 , BLW26 , BLW27 , BLW29 , BLW31 , BLW32 , D882P , BLW34 , BLW35 , BLW36 , BLW37 , BLW38 , BLW39 , BLW42 , BLW43 .

History: 2SD1805 | MMUN2237L | BCY33A | DT1321 | BFR21

Keywords - BLW33 transistor datasheet

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