All Transistors. BLW50F Datasheet

 

BLW50F Datasheet and Replacement


   Type Designator: BLW50F
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 94 W
   Maximum Collector-Base Voltage |Vcb|: 110 V
   Maximum Collector-Emitter Voltage |Vce|: 55 V
   Maximum Emitter-Base Voltage |Veb|: 4 V
   Maximum Collector Current |Ic max|: 2.5 A
   Max. Operating Junction Temperature (Tj): 200 °C
   Transition Frequency (ft): 500 MHz
   Collector Capacitance (Cc): 100 pF
   Forward Current Transfer Ratio (hFE), MIN: 15
   Noise Figure, dB: -
   Package: M174
 

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BLW50F Datasheet (PDF)

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BLW50F

DISCRETE SEMICONDUCTORSDATA SHEETBLW50FHF/VHF power transistorAugust 1986Product specificationPhilips Semiconductors Product specificationHF/VHF power transistor BLW50FIt has a 3/8" flange envelope with aDESCRIPTIONceramic cap. All leads are isolatedN-P-N silicon planar epitaxialfrom the flange.transistor primarily intended for use inclass-A, AB and B operated, indu

Datasheet: BLW39 , BLW42 , BLW43 , BLW44 , BLW45 , BLW46 , BLW47 , BLW48 , 2SC5198 , BLW60 , BLW60C , BLW64 , BLW65 , BLW66 , BLW67 , BLW68 , BLW69 .

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