BLW50F Specs and Replacement

Type Designator: BLW50F

Material of Transistor: Si

Polarity: NPN

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 94 W

Maximum Collector-Base Voltage |Vcb|: 110 V

Maximum Collector-Emitter Voltage |Vce|: 55 V

Maximum Emitter-Base Voltage |Veb|: 4 V

Maximum Collector Current |Ic max|: 2.5 A

Max. Operating Junction Temperature (Tj): 200 °C

Electrical Characteristics

Transition Frequency (ft): 500 MHz

Collector Capacitance (Cc): 100 pF

Forward Current Transfer Ratio (hFE), MIN: 15

Noise Figure, dB: -

Package: M174

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BLW50F datasheet

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BLW50F

DISCRETE SEMICONDUCTORS DATA SHEET BLW50F HF/VHF power transistor August 1986 Product specification Philips Semiconductors Product specification HF/VHF power transistor BLW50F It has a 3/8" flange envelope with a DESCRIPTION ceramic cap. All leads are isolated N-P-N silicon planar epitaxial from the flange. transistor primarily intended for use in class-A, AB and B operated, indu... See More ⇒

Detailed specifications: BLW39, BLW42, BLW43, BLW44, BLW45, BLW46, BLW47, BLW48, MJE350, BLW60, BLW60C, BLW64, BLW65, BLW66, BLW67, BLW68, BLW69

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