BLW50F Datasheet, Equivalent, Cross Reference Search
Type Designator: BLW50F
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 94 W
Maximum Collector-Base Voltage |Vcb|: 110 V
Maximum Collector-Emitter Voltage |Vce|: 55 V
Maximum Emitter-Base Voltage |Veb|: 4 V
Maximum Collector Current |Ic max|: 2.5 A
Max. Operating Junction Temperature (Tj): 200 °C
Transition Frequency (ft): 500 MHz
Collector Capacitance (Cc): 100 pF
Forward Current Transfer Ratio (hFE), MIN: 15
Noise Figure, dB: -
Package: M174
BLW50F Transistor Equivalent Substitute - Cross-Reference Search
BLW50F Datasheet (PDF)
..1. Size:62K philips
blw50f.pdf
blw50f.pdf
DISCRETE SEMICONDUCTORSDATA SHEETBLW50FHF/VHF power transistorAugust 1986Product specificationPhilips Semiconductors Product specificationHF/VHF power transistor BLW50FIt has a 3/8" flange envelope with aDESCRIPTIONceramic cap. All leads are isolatedN-P-N silicon planar epitaxialfrom the flange.transistor primarily intended for use inclass-A, AB and B operated, indu
Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .
History: 2N2008
