BLW60C Specs and Replacement

Type Designator: BLW60C

Material of Transistor: Si

Polarity: NPN

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 100 W

Maximum Collector-Base Voltage |Vcb|: 36 V

Maximum Collector-Emitter Voltage |Vce|: 18 V

Maximum Emitter-Base Voltage |Veb|: 4 V

Maximum Collector Current |Ic max|: 22 A

Max. Operating Junction Temperature (Tj): 200 °C

Electrical Characteristics

Transition Frequency (ft): 300 MHz

Collector Capacitance (Cc): 240 pF

Forward Current Transfer Ratio (hFE), MIN: 10

Noise Figure, dB: -

Package: TO128

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BLW60C datasheet

 ..1. Size:86K  philips

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BLW60C

DISCRETE SEMICONDUCTORS DATA SHEET BLW60C VHF power transistor March 1993 Product specification Philips Semiconductors Product specification VHF power transistor BLW60C Matched hFE groups are available on DESCRIPTION request. N-P-N silicon planar epitaxial It has a 3/8" capstan envelope with a transistor intended for use in class-A, ceramic cap. All leads are isolated B and C op... See More ⇒

Detailed specifications: BLW43, BLW44, BLW45, BLW46, BLW47, BLW48, BLW50F, BLW60, BD136, BLW64, BLW65, BLW66, BLW67, BLW68, BLW69, BLW70, BLW71

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