BLW60C Datasheet and Replacement
Type Designator: BLW60C
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 100 W
Maximum Collector-Base Voltage |Vcb|: 36 V
Maximum Collector-Emitter Voltage |Vce|: 18 V
Maximum Emitter-Base Voltage |Veb|: 4 V
Maximum Collector Current |Ic max|: 22 A
Max. Operating Junction Temperature (Tj): 200 °C
Transition Frequency (ft): 300 MHz
Collector Capacitance (Cc): 240 pF
Forward Current Transfer Ratio (hFE), MIN: 10
Noise Figure, dB: -
Package: TO128
BLW60C Substitution
BLW60C Datasheet (PDF)
blw60c.pdf

DISCRETE SEMICONDUCTORSDATA SHEETBLW60CVHF power transistorMarch 1993Product specificationPhilips Semiconductors Product specificationVHF power transistor BLW60CMatched hFE groups are available onDESCRIPTIONrequest.N-P-N silicon planar epitaxialIt has a 3/8" capstan envelope with atransistor intended for use in class-A,ceramic cap. All leads are isolatedB and C op
Datasheet: BLW43 , BLW44 , BLW45 , BLW46 , BLW47 , BLW48 , BLW50F , BLW60 , BD136 , BLW64 , BLW65 , BLW66 , BLW67 , BLW68 , BLW69 , BLW70 , BLW71 .
History: 3DG2873 | 3DG2878 | SMMBT4401L
Keywords - BLW60C transistor datasheet
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History: 3DG2873 | 3DG2878 | SMMBT4401L



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