All Transistors. BLW60C Datasheet

 

BLW60C Datasheet and Replacement


   Type Designator: BLW60C
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 100 W
   Maximum Collector-Base Voltage |Vcb|: 36 V
   Maximum Collector-Emitter Voltage |Vce|: 18 V
   Maximum Emitter-Base Voltage |Veb|: 4 V
   Maximum Collector Current |Ic max|: 22 A
   Max. Operating Junction Temperature (Tj): 200 °C
   Transition Frequency (ft): 300 MHz
   Collector Capacitance (Cc): 240 pF
   Forward Current Transfer Ratio (hFE), MIN: 10
   Noise Figure, dB: -
   Package: TO128
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BLW60C Datasheet (PDF)

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BLW60C

DISCRETE SEMICONDUCTORSDATA SHEETBLW60CVHF power transistorMarch 1993Product specificationPhilips Semiconductors Product specificationVHF power transistor BLW60CMatched hFE groups are available onDESCRIPTIONrequest.N-P-N silicon planar epitaxialIt has a 3/8" capstan envelope with atransistor intended for use in class-A,ceramic cap. All leads are isolatedB and C op

Datasheet: 2SA1803O , 2SA1803R , 2SA1804 , 2SA1804O , 2SA1804R , 2SA1805 , 2SA1805O , 2SA1805R , TIP31 , 2SA181 , 2SA1810 , 2SA1810B , 2SA1810C , 2SA1811 , 2SA1815 , 2SA1815-3 , 2SA1815-4 .

History: D29E2 | BDS28A | KTB2510 | XA131 | 2SA3802 | MMBT5089 | 2SA1746

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