BLW80 Specs and Replacement

Type Designator: BLW80

Material of Transistor: Si

Polarity: NPN

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 17 W

Maximum Collector-Base Voltage |Vcb|: 36 V

Maximum Collector-Emitter Voltage |Vce|: 17 V

Maximum Emitter-Base Voltage |Veb|: 4 V

Maximum Collector Current |Ic max|: 3 A

Max. Operating Junction Temperature (Tj): 200 °C

Electrical Characteristics

Transition Frequency (ft): 750 MHz

Collector Capacitance (Cc): 28 pF

Forward Current Transfer Ratio (hFE), MIN: 10

Noise Figure, dB: -

Package: TO128

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BLW80 datasheet

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BLW80

DISCRETE SEMICONDUCTORS DATA SHEET BLW80 UHF power transistor March 1993 Product specification Philips Semiconductors Product specification UHF power transistor BLW80 1 The transistor is housed in a 4" DESCRIPTION capstan envelope with a ceramic cap. N-P-N silicon planar epitaxial transistor intended for transmitting applications in class-A, B or C in the u.h.f. and v.h.f. ra... See More ⇒

Detailed specifications: BLW71, BLW72, BLW73, BLW75, BLW76, BLW77, BLW78, BLW79, C1815, BLW81, BLW82, BLW83, BLW84, BLW85, BLW86, BLW87, BLW89

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