All Transistors. BLW80 Datasheet

 

BLW80 Datasheet and Replacement


   Type Designator: BLW80
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 17 W
   Maximum Collector-Base Voltage |Vcb|: 36 V
   Maximum Collector-Emitter Voltage |Vce|: 17 V
   Maximum Emitter-Base Voltage |Veb|: 4 V
   Maximum Collector Current |Ic max|: 3 A
   Max. Operating Junction Temperature (Tj): 200 °C
   Transition Frequency (ft): 750 MHz
   Collector Capacitance (Cc): 28 pF
   Forward Current Transfer Ratio (hFE), MIN: 10
   Noise Figure, dB: -
   Package: TO128
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BLW80 Datasheet (PDF)

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BLW80

DISCRETE SEMICONDUCTORSDATA SHEETBLW80UHF power transistorMarch 1993Product specificationPhilips Semiconductors Product specificationUHF power transistor BLW801The transistor is housed in a 4"DESCRIPTIONcapstan envelope with a ceramic cap.N-P-N silicon planar epitaxialtransistor intended for transmittingapplications in class-A, B or C in theu.h.f. and v.h.f. ra

Datasheet: 2SA1803O , 2SA1803R , 2SA1804 , 2SA1804O , 2SA1804R , 2SA1805 , 2SA1805O , 2SA1805R , TIP31 , 2SA181 , 2SA1810 , 2SA1810B , 2SA1810C , 2SA1811 , 2SA1815 , 2SA1815-3 , 2SA1815-4 .

History: D29E2 | BDS28A | KTB2510 | 2N76 | 2SA3802 | 2SD380A | 3DG458

Keywords - BLW80 transistor datasheet

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