BLW80 Datasheet, Equivalent, Cross Reference Search
Type Designator: BLW80
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 17 W
Maximum Collector-Base Voltage |Vcb|: 36 V
Maximum Collector-Emitter Voltage |Vce|: 17 V
Maximum Emitter-Base Voltage |Veb|: 4 V
Maximum Collector Current |Ic max|: 3 A
Max. Operating Junction Temperature (Tj): 200 °C
Transition Frequency (ft): 750 MHz
Collector Capacitance (Cc): 28 pF
Forward Current Transfer Ratio (hFE), MIN: 10
Noise Figure, dB: -
Package: TO128
BLW80 Transistor Equivalent Substitute - Cross-Reference Search
BLW80 Datasheet (PDF)
..1. Size:62K philips
blw80.pdf
blw80.pdf
DISCRETE SEMICONDUCTORSDATA SHEETBLW80UHF power transistorMarch 1993Product specificationPhilips Semiconductors Product specificationUHF power transistor BLW801The transistor is housed in a 4"DESCRIPTIONcapstan envelope with a ceramic cap.N-P-N silicon planar epitaxialtransistor intended for transmittingapplications in class-A, B or C in theu.h.f. and v.h.f. ra
Datasheet: 2SA1803O , 2SA1803R , 2SA1804 , 2SA1804O , 2SA1804R , 2SA1805 , 2SA1805O , 2SA1805R , TIP42 , 2SA181 , 2SA1810 , 2SA1810B , 2SA1810C , 2SA1811 , 2SA1815 , 2SA1815-3 , 2SA1815-4 .
History: BFG424W | 2N1895 | BCW14K
