All Transistors. BLW80 Datasheet

 

BLW80 Datasheet and Replacement


   Type Designator: BLW80
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 17 W
   Maximum Collector-Base Voltage |Vcb|: 36 V
   Maximum Collector-Emitter Voltage |Vce|: 17 V
   Maximum Emitter-Base Voltage |Veb|: 4 V
   Maximum Collector Current |Ic max|: 3 A
   Max. Operating Junction Temperature (Tj): 200 °C
   Transition Frequency (ft): 750 MHz
   Collector Capacitance (Cc): 28 pF
   Forward Current Transfer Ratio (hFE), MIN: 10
   Noise Figure, dB: -
   Package: TO128
 
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BLW80 Datasheet (PDF)

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BLW80

DISCRETE SEMICONDUCTORSDATA SHEETBLW80UHF power transistorMarch 1993Product specificationPhilips Semiconductors Product specificationUHF power transistor BLW801The transistor is housed in a 4"DESCRIPTIONcapstan envelope with a ceramic cap.N-P-N silicon planar epitaxialtransistor intended for transmittingapplications in class-A, B or C in theu.h.f. and v.h.f. ra

Datasheet: BLW71 , BLW72 , BLW73 , BLW75 , BLW76 , BLW77 , BLW78 , BLW79 , 2N2222 , BLW81 , BLW82 , BLW83 , BLW84 , BLW85 , BLW86 , BLW87 , BLW89 .

History: BC159B | 2N6192

Keywords - BLW80 transistor datasheet

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