BLW81 Datasheet, Equivalent, Cross Reference Search
Type Designator: BLW81
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 40 W
Maximum Collector-Base Voltage |Vcb|: 36 V
Maximum Collector-Emitter Voltage |Vce|: 17 V
Maximum Emitter-Base Voltage |Veb|: 4 V
Maximum Collector Current |Ic max|: 7.5 A
Max. Operating Junction Temperature (Tj): 200 °C
Transition Frequency (ft): 650 MHz
Collector Capacitance (Cc): 60 pF
Forward Current Transfer Ratio (hFE), MIN: 10
Noise Figure, dB: -
BLW81 Transistor Equivalent Substitute - Cross-Reference Search
BLW81 Datasheet (PDF)
..1. Size:62K philips
blw81.pdf
blw81.pdf
DISCRETE SEMICONDUCTORSDATA SHEETBLW81UHF power transistorMarch 1993Product specificationPhilips Semiconductors Product specificationUHF power transistor BLW811The transistor is housed in a 4"DESCRIPTIONcapstan envelope with a ceramic cap.N-P-N silicon planar epitaxialtransistor intended for transmittingapplications in class-A, B or C in theu.h.f. and v.h.f. ra
Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .
