All Transistors. BLW81 Datasheet

 

BLW81 Datasheet and Replacement


   Type Designator: BLW81
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 40 W
   Maximum Collector-Base Voltage |Vcb|: 36 V
   Maximum Collector-Emitter Voltage |Vce|: 17 V
   Maximum Emitter-Base Voltage |Veb|: 4 V
   Maximum Collector Current |Ic max|: 7.5 A
   Max. Operating Junction Temperature (Tj): 200 °C
   Transition Frequency (ft): 650 MHz
   Collector Capacitance (Cc): 60 pF
   Forward Current Transfer Ratio (hFE), MIN: 10
   Noise Figure, dB: -
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BLW81 Datasheet (PDF)

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BLW81

DISCRETE SEMICONDUCTORSDATA SHEETBLW81UHF power transistorMarch 1993Product specificationPhilips Semiconductors Product specificationUHF power transistor BLW811The transistor is housed in a 4"DESCRIPTIONcapstan envelope with a ceramic cap.N-P-N silicon planar epitaxialtransistor intended for transmittingapplications in class-A, B or C in theu.h.f. and v.h.f. ra

Datasheet: 2N3192 , 2N3193 , 2N3194 , 2N3195 , 2N3196 , 2N3197 , 2N3198 , 2N3199 , MJE340 , 2N320 , 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 .

History: FMMT723 | 2N3322 | IMT3A | DZT491 | FML9 | NKT202 | 2N1587

Keywords - BLW81 transistor datasheet

 BLW81 cross reference
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