BLW83 Datasheet, Equivalent, Cross Reference Search
Type Designator: BLW83
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 76 W
Maximum Collector-Base Voltage |Vcb|: 65 V
Maximum Collector-Emitter Voltage |Vce|: 36 V
Maximum Emitter-Base Voltage |Veb|: 4 V
Maximum Collector Current |Ic max|: 3 A
Max. Operating Junction Temperature (Tj): 200 °C
Transition Frequency (ft): 500 MHz
Collector Capacitance (Cc): 100 pF
Forward Current Transfer Ratio (hFE), MIN: 10
Noise Figure, dB: -
Package: M174
BLW83 Transistor Equivalent Substitute - Cross-Reference Search
BLW83 Datasheet (PDF)
..1. Size:64K philips
blw83.pdf
blw83.pdf
DISCRETE SEMICONDUCTORSDATA SHEETBLW83HF/VHF power transistorAugust 1986Product specificationPhilips Semiconductors Product specificationHF/VHF power transistor BLW83Matched hFE groups are available onDESCRIPTIONrequest.N-P-N silicon planar epitaxialIt has a 3/8" flange envelope with atransistor for use in transmittingceramic cap. All leads are isolatedamplifiers
Datasheet: 2SA1771 , 2SA178 , 2SA1790 , 2SA1791 , 2SA1792 , 2SA1793 , 2SA1794 , 2SA1795 , 2N3906 , 2SA1799 , 2SA17H , 2SA18 , 2SA180 , 2SA1800 , 2SA1800O , 2SA1800R , 2SA1800Y .
History: BLY98 | GSRU20040 | 2N1972
