All Transistors. BLW83 Datasheet

 

BLW83 Datasheet and Replacement


   Type Designator: BLW83
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 76 W
   Maximum Collector-Base Voltage |Vcb|: 65 V
   Maximum Collector-Emitter Voltage |Vce|: 36 V
   Maximum Emitter-Base Voltage |Veb|: 4 V
   Maximum Collector Current |Ic max|: 3 A
   Max. Operating Junction Temperature (Tj): 200 °C
   Transition Frequency (ft): 500 MHz
   Collector Capacitance (Cc): 100 pF
   Forward Current Transfer Ratio (hFE), MIN: 10
   Noise Figure, dB: -
   Package: M174
 

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BLW83 Datasheet (PDF)

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BLW83

DISCRETE SEMICONDUCTORSDATA SHEETBLW83HF/VHF power transistorAugust 1986Product specificationPhilips Semiconductors Product specificationHF/VHF power transistor BLW83Matched hFE groups are available onDESCRIPTIONrequest.N-P-N silicon planar epitaxialIt has a 3/8" flange envelope with atransistor for use in transmittingceramic cap. All leads are isolatedamplifiers

Datasheet: BLW75 , BLW76 , BLW77 , BLW78 , BLW79 , BLW80 , BLW81 , BLW82 , 2N3904 , BLW84 , BLW85 , BLW86 , BLW87 , BLW89 , BLW90 , BLW91 , BLW92 .

History: 2SD1904Q | 2N3752 | 2SA2164 | CN302 | BD530

Keywords - BLW83 transistor datasheet

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