BLW83 Specs and Replacement
Type Designator: BLW83
Material of Transistor: Si
Polarity: NPN
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 76 W
Maximum Collector-Base Voltage |Vcb|: 65 V
Maximum Collector-Emitter Voltage |Vce|: 36 V
Maximum Emitter-Base Voltage |Veb|: 4 V
Maximum Collector Current |Ic max|: 3 A
Max. Operating Junction Temperature (Tj): 200 °C
Electrical Characteristics
Transition Frequency (ft): 500 MHz
Collector Capacitance (Cc): 100 pF
Forward Current Transfer Ratio (hFE), MIN: 10
Package: M174
BLW83 Substitution
- BJT ⓘ Cross-Reference Search
BLW83 datasheet
DISCRETE SEMICONDUCTORS DATA SHEET BLW83 HF/VHF power transistor August 1986 Product specification Philips Semiconductors Product specification HF/VHF power transistor BLW83 Matched hFE groups are available on DESCRIPTION request. N-P-N silicon planar epitaxial It has a 3/8" flange envelope with a transistor for use in transmitting ceramic cap. All leads are isolated amplifiers ... See More ⇒
Detailed specifications: BLW75, BLW76, BLW77, BLW78, BLW79, BLW80, BLW81, BLW82, BC548, BLW84, BLW85, BLW86, BLW87, BLW89, BLW90, BLW91, BLW92
Keywords - BLW83 pdf specs
BLW83 cross reference
BLW83 equivalent finder
BLW83 pdf lookup
BLW83 substitution
BLW83 replacement
