All Transistors. BLW83 Datasheet

 

BLW83 Datasheet and Replacement


   Type Designator: BLW83
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 76 W
   Maximum Collector-Base Voltage |Vcb|: 65 V
   Maximum Collector-Emitter Voltage |Vce|: 36 V
   Maximum Emitter-Base Voltage |Veb|: 4 V
   Maximum Collector Current |Ic max|: 3 A
   Max. Operating Junction Temperature (Tj): 200 °C
   Transition Frequency (ft): 500 MHz
   Collector Capacitance (Cc): 100 pF
   Forward Current Transfer Ratio (hFE), MIN: 10
   Noise Figure, dB: -
   Package: M174
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BLW83 Datasheet (PDF)

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BLW83

DISCRETE SEMICONDUCTORSDATA SHEETBLW83HF/VHF power transistorAugust 1986Product specificationPhilips Semiconductors Product specificationHF/VHF power transistor BLW83Matched hFE groups are available onDESCRIPTIONrequest.N-P-N silicon planar epitaxialIt has a 3/8" flange envelope with atransistor for use in transmittingceramic cap. All leads are isolatedamplifiers

Datasheet: 2SA1803O , 2SA1803R , 2SA1804 , 2SA1804O , 2SA1804R , 2SA1805 , 2SA1805O , 2SA1805R , TIP31 , 2SA181 , 2SA1810 , 2SA1810B , 2SA1810C , 2SA1811 , 2SA1815 , 2SA1815-3 , 2SA1815-4 .

History: MP15 | BFR10 | 2SB1122R | ECG186A | NB323H | DSS5140U | BUV98V

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