BLW85 Datasheet, Equivalent, Cross Reference Search
Type Designator: BLW85
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 105 W
Maximum Collector-Base Voltage |Vcb|: 36 V
Maximum Collector-Emitter Voltage |Vce|: 18 V
Maximum Emitter-Base Voltage |Veb|: 4 V
Maximum Collector Current |Ic max|: 22 A
Max. Operating Junction Temperature (Tj): 200 °C
Transition Frequency (ft): 325 MHz
Collector Capacitance (Cc): 240 pF
Forward Current Transfer Ratio (hFE), MIN: 10
Noise Figure, dB: -
Package: M174
BLW85 Transistor Equivalent Substitute - Cross-Reference Search
BLW85 Datasheet (PDF)
..1. Size:86K philips
blw85.pdf
blw85.pdf
DISCRETE SEMICONDUCTORSDATA SHEETBLW85HF/VHF power transistorMarch 1993Product specificationPhilips Semiconductors Product specificationHF/VHF power transistor BLW85Matched hFE groups are available onDESCRIPTIONrequest.N-P-N silicon planar epitaxialIt has a 3/8" flange envelope with atransistor intended for use in class-A,ceramic cap. All leads are isolatedB and C
Datasheet: 2SA1803O , 2SA1803R , 2SA1804 , 2SA1804O , 2SA1804R , 2SA1805 , 2SA1805O , 2SA1805R , D209L , 2SA181 , 2SA1810 , 2SA1810B , 2SA1810C , 2SA1811 , 2SA1815 , 2SA1815-3 , 2SA1815-4 .
History: 2SC2783
