All Transistors. BLW85 Datasheet

 

BLW85 Datasheet and Replacement


   Type Designator: BLW85
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 105 W
   Maximum Collector-Base Voltage |Vcb|: 36 V
   Maximum Collector-Emitter Voltage |Vce|: 18 V
   Maximum Emitter-Base Voltage |Veb|: 4 V
   Maximum Collector Current |Ic max|: 22 A
   Max. Operating Junction Temperature (Tj): 200 °C
   Transition Frequency (ft): 325 MHz
   Collector Capacitance (Cc): 240 pF
   Forward Current Transfer Ratio (hFE), MIN: 10
   Noise Figure, dB: -
   Package: M174
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BLW85 Datasheet (PDF)

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BLW85

DISCRETE SEMICONDUCTORSDATA SHEETBLW85HF/VHF power transistorMarch 1993Product specificationPhilips Semiconductors Product specificationHF/VHF power transistor BLW85Matched hFE groups are available onDESCRIPTIONrequest.N-P-N silicon planar epitaxialIt has a 3/8" flange envelope with atransistor intended for use in class-A,ceramic cap. All leads are isolatedB and C

Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .

History: 2SCR554P5 | MRF5812 | DTA143ZKA | 2N1613-46 | UMB6NFHA | MCH3245 | RT1N136C

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