BLW85 Datasheet and Replacement
Type Designator: BLW85
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 105 W
Maximum Collector-Base Voltage |Vcb|: 36 V
Maximum Collector-Emitter Voltage |Vce|: 18 V
Maximum Emitter-Base Voltage |Veb|: 4 V
Maximum Collector Current |Ic max|: 22 A
Max. Operating Junction Temperature (Tj): 200 °C
Transition Frequency (ft): 325 MHz
Collector Capacitance (Cc): 240 pF
Forward Current Transfer Ratio (hFE), MIN: 10
Noise Figure, dB: -
Package: M174
BLW85 Substitution
BLW85 Datasheet (PDF)
blw85.pdf

DISCRETE SEMICONDUCTORSDATA SHEETBLW85HF/VHF power transistorMarch 1993Product specificationPhilips Semiconductors Product specificationHF/VHF power transistor BLW85Matched hFE groups are available onDESCRIPTIONrequest.N-P-N silicon planar epitaxialIt has a 3/8" flange envelope with atransistor intended for use in class-A,ceramic cap. All leads are isolatedB and C
Datasheet: BLW77 , BLW78 , BLW79 , BLW80 , BLW81 , BLW82 , BLW83 , BLW84 , 13007 , BLW86 , BLW87 , BLW89 , BLW90 , BLW91 , BLW92 , BLW93 , BLW94 .
History: OC364 | 2SD1867 | KSC1395R | D43CU5 | NSS40200UW6T1G | 2SC1687
Keywords - BLW85 transistor datasheet
BLW85 cross reference
BLW85 equivalent finder
BLW85 lookup
BLW85 substitution
BLW85 replacement
History: OC364 | 2SD1867 | KSC1395R | D43CU5 | NSS40200UW6T1G | 2SC1687



LIST
Last Update
BJT: GA1A4M | SBT42 | 2SA200-Y | 2SA200-O | 2SD882-Q | 2SD882-P | 2SD882-E | 2SC945-L | 2SC945-H | 2SC4226-R23 | 2SC3357-F | 2SC3357-E | 2SC3356-R26 | 2SC3356-R24 | 2SC3356-R23 | 2SB772-Q | 2SB772-P | 2SB772-E | 2SA1015-L | 2SA1015-H | HSS8550
Popular searches
2n270 | 2n2924 | mpsa65 | 2sa794 | 2sa816 | 2sc897 datasheet | 2sd389 | mp41 transistor