BLW85 Specs and Replacement
Type Designator: BLW85
Material of Transistor: Si
Polarity: NPN
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 105 W
Maximum Collector-Base Voltage |Vcb|: 36 V
Maximum Collector-Emitter Voltage |Vce|: 18 V
Maximum Emitter-Base Voltage |Veb|: 4 V
Maximum Collector Current |Ic max|: 22 A
Max. Operating Junction Temperature (Tj): 200 °C
Electrical Characteristics
Transition Frequency (ft): 325 MHz
Collector Capacitance (Cc): 240 pF
Forward Current Transfer Ratio (hFE), MIN: 10
Package: M174
BLW85 Substitution
- BJT ⓘ Cross-Reference Search
BLW85 datasheet
DISCRETE SEMICONDUCTORS DATA SHEET BLW85 HF/VHF power transistor March 1993 Product specification Philips Semiconductors Product specification HF/VHF power transistor BLW85 Matched hFE groups are available on DESCRIPTION request. N-P-N silicon planar epitaxial It has a 3/8" flange envelope with a transistor intended for use in class-A, ceramic cap. All leads are isolated B and C... See More ⇒
Detailed specifications: BLW77, BLW78, BLW79, BLW80, BLW81, BLW82, BLW83, BLW84, C5198, BLW86, BLW87, BLW89, BLW90, BLW91, BLW92, BLW93, BLW94
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