BLW90 Specs and Replacement

Type Designator: BLW90

Material of Transistor: Si

Polarity: NPN

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 18 W

Maximum Collector-Base Voltage |Vcb|: 60 V

Maximum Collector-Emitter Voltage |Vce|: 30 V

Maximum Emitter-Base Voltage |Veb|: 4 V

Maximum Collector Current |Ic max|: 0.62 A

Max. Operating Junction Temperature (Tj): 200 °C

Electrical Characteristics

Transition Frequency (ft): 1200 MHz

Collector Capacitance (Cc): 17 pF

Forward Current Transfer Ratio (hFE), MIN: 10

Noise Figure, dB: -

Package: TO131

 BLW90 Substitution

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BLW90 datasheet

 ..1. Size:58K  philips

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BLW90

DISCRETE SEMICONDUCTORS DATA SHEET BLW90 UHF power transistor August 1986 Product specification Philips Semiconductors Product specification UHF power transistor BLW90 1 The transistor is housed in a 4" DESCRIPTION capstan envelope with a ceramic cap. N-P-N silicon planar epitaxial All leads are isolated from the stud. transistor suitable for transmitting applications in clas... See More ⇒

Detailed specifications: BLW81, BLW82, BLW83, BLW84, BLW85, BLW86, BLW87, BLW89, TIP122, BLW91, BLW92, BLW93, BLW94, BLW95, BLW96, BLW98, BLW99

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