BLW90 Datasheet, Equivalent, Cross Reference Search
Type Designator: BLW90
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 18 W
Maximum Collector-Base Voltage |Vcb|: 60 V
Maximum Collector-Emitter Voltage |Vce|: 30 V
Maximum Emitter-Base Voltage |Veb|: 4 V
Maximum Collector Current |Ic max|: 0.62 A
Max. Operating Junction Temperature (Tj): 200 °C
Transition Frequency (ft): 1200 MHz
Collector Capacitance (Cc): 17 pF
Forward Current Transfer Ratio (hFE), MIN: 10
Noise Figure, dB: -
Package: TO131
BLW90 Transistor Equivalent Substitute - Cross-Reference Search
BLW90 Datasheet (PDF)
..1. Size:58K philips
blw90.pdf
blw90.pdf
DISCRETE SEMICONDUCTORSDATA SHEETBLW90UHF power transistorAugust 1986Product specificationPhilips Semiconductors Product specificationUHF power transistor BLW901The transistor is housed in a 4"DESCRIPTIONcapstan envelope with a ceramic cap.N-P-N silicon planar epitaxialAll leads are isolated from the stud.transistor suitable for transmittingapplications in clas
Datasheet: 2SA1771 , 2SA178 , 2SA1790 , 2SA1791 , 2SA1792 , 2SA1793 , 2SA1794 , 2SA1795 , 2N3906 , 2SA1799 , 2SA17H , 2SA18 , 2SA180 , 2SA1800 , 2SA1800O , 2SA1800R , 2SA1800Y .
History: 2N1892
