All Transistors. BLW90 Datasheet

 

BLW90 Datasheet and Replacement


   Type Designator: BLW90
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 18 W
   Maximum Collector-Base Voltage |Vcb|: 60 V
   Maximum Collector-Emitter Voltage |Vce|: 30 V
   Maximum Emitter-Base Voltage |Veb|: 4 V
   Maximum Collector Current |Ic max|: 0.62 A
   Max. Operating Junction Temperature (Tj): 200 °C
   Transition Frequency (ft): 1200 MHz
   Collector Capacitance (Cc): 17 pF
   Forward Current Transfer Ratio (hFE), MIN: 10
   Noise Figure, dB: -
   Package: TO131
 

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BLW90 Datasheet (PDF)

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BLW90

DISCRETE SEMICONDUCTORSDATA SHEETBLW90UHF power transistorAugust 1986Product specificationPhilips Semiconductors Product specificationUHF power transistor BLW901The transistor is housed in a 4"DESCRIPTIONcapstan envelope with a ceramic cap.N-P-N silicon planar epitaxialAll leads are isolated from the stud.transistor suitable for transmittingapplications in clas

Datasheet: BLW81 , BLW82 , BLW83 , BLW84 , BLW85 , BLW86 , BLW87 , BLW89 , 2SA1943 , BLW91 , BLW92 , BLW93 , BLW94 , BLW95 , BLW96 , BLW98 , BLW99 .

History: 2SB1188SQ-P | D44R2 | BFQ232A | 2SC523 | 2SC2330Y

Keywords - BLW90 transistor datasheet

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