All Transistors. BLW90 Datasheet

 

BLW90 Datasheet and Replacement


   Type Designator: BLW90
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 18 W
   Maximum Collector-Base Voltage |Vcb|: 60 V
   Maximum Collector-Emitter Voltage |Vce|: 30 V
   Maximum Emitter-Base Voltage |Veb|: 4 V
   Maximum Collector Current |Ic max|: 0.62 A
   Max. Operating Junction Temperature (Tj): 200 °C
   Transition Frequency (ft): 1200 MHz
   Collector Capacitance (Cc): 17 pF
   Forward Current Transfer Ratio (hFE), MIN: 10
   Noise Figure, dB: -
   Package: TO131
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BLW90 Datasheet (PDF)

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BLW90

DISCRETE SEMICONDUCTORSDATA SHEETBLW90UHF power transistorAugust 1986Product specificationPhilips Semiconductors Product specificationUHF power transistor BLW901The transistor is housed in a 4"DESCRIPTIONcapstan envelope with a ceramic cap.N-P-N silicon planar epitaxialAll leads are isolated from the stud.transistor suitable for transmittingapplications in clas

Datasheet: 2SA1803O , 2SA1803R , 2SA1804 , 2SA1804O , 2SA1804R , 2SA1805 , 2SA1805O , 2SA1805R , TIP31 , 2SA181 , 2SA1810 , 2SA1810B , 2SA1810C , 2SA1811 , 2SA1815 , 2SA1815-3 , 2SA1815-4 .

History: KSA1241O | KSA643O | CS9011I | KSA643Y | LDTA115EET1G | UMT2907A | PHPT60406NY

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