All Transistors. BLW96 Datasheet

 

BLW96 Datasheet and Replacement


   Type Designator: BLW96
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 340 W
   Maximum Collector-Base Voltage |Vcb|: 110 V
   Maximum Collector-Emitter Voltage |Vce|: 55 V
   Maximum Emitter-Base Voltage |Veb|: 4 V
   Maximum Collector Current |Ic max|: 12 A
   Max. Operating Junction Temperature (Tj): 200 °C
   Transition Frequency (ft): 1200 MHz
   Collector Capacitance (Cc): 500 pF
   Forward Current Transfer Ratio (hFE), MIN: 15
   Noise Figure, dB: -
   Package: M174
 

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BLW96 Datasheet (PDF)

 ..1. Size:73K  philips
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BLW96

DISCRETE SEMICONDUCTORSDATA SHEETBLW96HF/VHF power transistorAugust 1986Product specificationPhilips Semiconductors Product specificationHF/VHF power transistor BLW96conditions. Transistors are suppliedDESCRIPTIONin matched hFE groups.N-P-N silicon planar epitaxial1The transistor has a 2" flangetransistor intended for use in class-A,envelope with a ceramic cap.

Datasheet: BLW87 , BLW89 , BLW90 , BLW91 , BLW92 , BLW93 , BLW94 , BLW95 , TIP122 , BLW98 , BLW99 , BLW99A , BLX10 , BLX11 , BLX12 , BLX13 , BLX13C .

Keywords - BLW96 transistor datasheet

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