BLW96 Datasheet, Equivalent, Cross Reference Search
Type Designator: BLW96
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 340 W
Maximum Collector-Base Voltage |Vcb|: 110 V
Maximum Collector-Emitter Voltage |Vce|: 55 V
Maximum Emitter-Base Voltage |Veb|: 4 V
Maximum Collector Current |Ic max|: 12 A
Max. Operating Junction Temperature (Tj): 200 °C
Transition Frequency (ft): 1200 MHz
Collector Capacitance (Cc): 500 pF
Forward Current Transfer Ratio (hFE), MIN: 15
Noise Figure, dB: -
Package: M174
BLW96 Transistor Equivalent Substitute - Cross-Reference Search
BLW96 Datasheet (PDF)
..1. Size:73K philips
blw96 cnv.pdf
blw96 cnv.pdf
DISCRETE SEMICONDUCTORSDATA SHEETBLW96HF/VHF power transistorAugust 1986Product specificationPhilips Semiconductors Product specificationHF/VHF power transistor BLW96conditions. Transistors are suppliedDESCRIPTIONin matched hFE groups.N-P-N silicon planar epitaxial1The transistor has a 2" flangetransistor intended for use in class-A,envelope with a ceramic cap.
Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .
