BLW96 Specs and Replacement

Type Designator: BLW96

Material of Transistor: Si

Polarity: NPN

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 340 W

Maximum Collector-Base Voltage |Vcb|: 110 V

Maximum Collector-Emitter Voltage |Vce|: 55 V

Maximum Emitter-Base Voltage |Veb|: 4 V

Maximum Collector Current |Ic max|: 12 A

Max. Operating Junction Temperature (Tj): 200 °C

Electrical Characteristics

Transition Frequency (ft): 1200 MHz

Collector Capacitance (Cc): 500 pF

Forward Current Transfer Ratio (hFE), MIN: 15

Noise Figure, dB: -

Package: M174

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BLW96 datasheet

 ..1. Size:73K  philips

 blw96 cnv.pdf pdf_icon

BLW96

DISCRETE SEMICONDUCTORS DATA SHEET BLW96 HF/VHF power transistor August 1986 Product specification Philips Semiconductors Product specification HF/VHF power transistor BLW96 conditions. Transistors are supplied DESCRIPTION in matched hFE groups. N-P-N silicon planar epitaxial 1 The transistor has a 2" flange transistor intended for use in class-A, envelope with a ceramic cap.... See More ⇒

Detailed specifications: BLW87, BLW89, BLW90, BLW91, BLW92, BLW93, BLW94, BLW95, BC557, BLW98, BLW99, BLW99A, BLX10, BLX11, BLX12, BLX13, BLX13C

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