All Transistors. BLY87 Datasheet

 

BLY87 Datasheet and Replacement


   Type Designator: BLY87
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 10 W
   Maximum Collector-Base Voltage |Vcb|: 36 V
   Maximum Collector-Emitter Voltage |Vce|: 18 V
   Maximum Emitter-Base Voltage |Veb|: 4 V
   Maximum Collector Current |Ic max|: 1.2 A
   Max. Operating Junction Temperature (Tj): 200 °C
   Transition Frequency (ft): 400 MHz
   Forward Current Transfer Ratio (hFE), MIN: 5
   Noise Figure, dB: -
   Package: TO61
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BLY87 Datasheet (PDF)

 0.1. Size:65K  philips
 bly87c cnv 2.pdf pdf_icon

BLY87

DISCRETE SEMICONDUCTORSDATA SHEETBLY87CVHF power transistorAugust 1986Product specificationPhilips Semiconductors Product specificationVHF power transistor BLY87CIt has a 3/8" capstan envelope with aDESCRIPTIONceramic cap. All leads are isolatedN-P-N silicon planar epitaxialfrom the stud.transistor intended for use in class-A,B and C operated mobile, h.f. andv.h.f

 0.2. Size:65K  philips
 bly87c-01 cnv 2.pdf pdf_icon

BLY87

DISCRETE SEMICONDUCTORSDATA SHEETBLY87CVHF power transistorAugust 1986Product specificationFile under Discrete Semiconductors, SC08aPhilips Semiconductors Product specificationVHF power transistor BLY87CIt has a 3/8" capstan envelope with aDESCRIPTIONceramic cap. All leads are isolatedN-P-N silicon planar epitaxialfrom the stud.transistor intended for use in class-A

Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .

History: 2SB1097 | KTC2553 | GT322E | MP3904R | GT305B | KSY63 | 2T916A

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