BLY87 Specs and Replacement

Type Designator: BLY87

Material of Transistor: Si

Polarity: NPN

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 10 W

Maximum Collector-Base Voltage |Vcb|: 36 V

Maximum Collector-Emitter Voltage |Vce|: 18 V

Maximum Emitter-Base Voltage |Veb|: 4 V

Maximum Collector Current |Ic max|: 1.2 A

Max. Operating Junction Temperature (Tj): 200 °C

Electrical Characteristics

Transition Frequency (ft): 400 MHz

Forward Current Transfer Ratio (hFE), MIN: 5

Noise Figure, dB: -

Package: TO61

 BLY87 Substitution

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BLY87 datasheet

 0.1. Size:65K  philips

 bly87c cnv 2.pdf pdf_icon

BLY87

DISCRETE SEMICONDUCTORS DATA SHEET BLY87C VHF power transistor August 1986 Product specification Philips Semiconductors Product specification VHF power transistor BLY87C It has a 3/8" capstan envelope with a DESCRIPTION ceramic cap. All leads are isolated N-P-N silicon planar epitaxial from the stud. transistor intended for use in class-A, B and C operated mobile, h.f. and v.h.f... See More ⇒

 0.2. Size:65K  philips

 bly87c-01 cnv 2.pdf pdf_icon

BLY87

DISCRETE SEMICONDUCTORS DATA SHEET BLY87C VHF power transistor August 1986 Product specification File under Discrete Semiconductors, SC08a Philips Semiconductors Product specification VHF power transistor BLY87C It has a 3/8" capstan envelope with a DESCRIPTION ceramic cap. All leads are isolated N-P-N silicon planar epitaxial from the stud. transistor intended for use in class-A... See More ⇒

Detailed specifications: BLY79, BLY80, BLY81, BLY82, BLY83, BLY84, BLY85, BLY86, BD136, BLY87A, BLY87C, BLY88, BLY88A, BLY88C, BLY88T, BLY89, BLY89A

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