BLY89 Datasheet and Replacement
Type Designator: BLY89
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 44 W
Maximum Collector-Base Voltage |Vcb|: 36 V
Maximum Collector-Emitter Voltage |Vce|: 18 V
Maximum Emitter-Base Voltage |Veb|: 4 V
Maximum Collector Current |Ic max|: 3.5 A
Max. Operating Junction Temperature (Tj): 200 °C
Transition Frequency (ft): 400 MHz
Forward Current Transfer Ratio (hFE), MIN: 5
Noise Figure, dB: -
Package: TO61
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BLY89 Datasheet (PDF)
bly89c cnv 2.pdf

DISCRETE SEMICONDUCTORSDATA SHEETBLY89CVHF power transistorAugust 1986Product specificationPhilips Semiconductors Product specificationVHF power transistor BLY89CDESCRIPTIONN-P-N silicon planar epitaxialtransistor intended for use in class-A,B and C operated mobile, industrialand military transmitters with anominal supply voltage of 13,5 V. Thetransistor is resistan
Datasheet: 2N3192 , 2N3193 , 2N3194 , 2N3195 , 2N3196 , 2N3197 , 2N3198 , 2N3199 , MJE340 , 2N320 , 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 .
History: 2N2904 | ECG185 | ECG332 | DTC124EEB | 2N5784 | 2SA1488 | NXP3875G
Keywords - BLY89 transistor datasheet
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History: 2N2904 | ECG185 | ECG332 | DTC124EEB | 2N5784 | 2SA1488 | NXP3875G



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