BLY89 Specs and Replacement
Type Designator: BLY89
Material of Transistor: Si
Polarity: NPN
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 44 W
Maximum Collector-Base Voltage |Vcb|: 36 V
Maximum Collector-Emitter Voltage |Vce|: 18 V
Maximum Emitter-Base Voltage |Veb|: 4 V
Maximum Collector Current |Ic max|: 3.5 A
Max. Operating Junction Temperature (Tj): 200 °C
Electrical Characteristics
Transition Frequency (ft): 400 MHz
Forward Current Transfer Ratio (hFE), MIN: 5
Package: TO61
BLY89 Substitution
- BJT ⓘ Cross-Reference Search
BLY89 datasheet
DISCRETE SEMICONDUCTORS DATA SHEET BLY89C VHF power transistor August 1986 Product specification Philips Semiconductors Product specification VHF power transistor BLY89C DESCRIPTION N-P-N silicon planar epitaxial transistor intended for use in class-A, B and C operated mobile, industrial and military transmitters with a nominal supply voltage of 13,5 V. The transistor is resistan... See More ⇒
Detailed specifications: BLY86, BLY87, BLY87A, BLY87C, BLY88, BLY88A, BLY88C, BLY88T, BD222, BLY89A, BLY89C, BLY90, BLY91, BLY91A, BLY91C, BLY92, BLY92A
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