All Transistors. BLY89 Datasheet

 

BLY89 Datasheet and Replacement


   Type Designator: BLY89
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 44 W
   Maximum Collector-Base Voltage |Vcb|: 36 V
   Maximum Collector-Emitter Voltage |Vce|: 18 V
   Maximum Emitter-Base Voltage |Veb|: 4 V
   Maximum Collector Current |Ic max|: 3.5 A
   Max. Operating Junction Temperature (Tj): 200 °C
   Transition Frequency (ft): 400 MHz
   Forward Current Transfer Ratio (hFE), MIN: 5
   Noise Figure, dB: -
   Package: TO61
 

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BLY89 Datasheet (PDF)

 0.1. Size:68K  philips
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BLY89

DISCRETE SEMICONDUCTORSDATA SHEETBLY89CVHF power transistorAugust 1986Product specificationPhilips Semiconductors Product specificationVHF power transistor BLY89CDESCRIPTIONN-P-N silicon planar epitaxialtransistor intended for use in class-A,B and C operated mobile, industrialand military transmitters with anominal supply voltage of 13,5 V. Thetransistor is resistan

Datasheet: BLY86 , BLY87 , BLY87A , BLY87C , BLY88 , BLY88A , BLY88C , BLY88T , 2SC5200 , BLY89A , BLY89C , BLY90 , BLY91 , BLY91A , BLY91C , BLY92 , BLY92A .

History: BD661K | 2SA312 | BLD13005DX | BFY86B | HD880 | NKT420 | 2SB395

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