BLY89C Datasheet, Equivalent, Cross Reference Search
Type Designator: BLY89C
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 73 W
Maximum Collector-Base Voltage |Vcb|: 36 V
Maximum Collector-Emitter Voltage |Vce|: 18 V
Maximum Emitter-Base Voltage |Veb|: 4 V
Maximum Collector Current |Ic max|: 12 A
Max. Operating Junction Temperature (Tj): 200 °C
Transition Frequency (ft): 400 MHz
Collector Capacitance (Cc): 130 pF
Forward Current Transfer Ratio (hFE), MIN: 10
Noise Figure, dB: -
Package: TO128
BLY89C Transistor Equivalent Substitute - Cross-Reference Search
BLY89C Datasheet (PDF)
bly89c cnv 2.pdf
DISCRETE SEMICONDUCTORSDATA SHEETBLY89CVHF power transistorAugust 1986Product specificationPhilips Semiconductors Product specificationVHF power transistor BLY89CDESCRIPTIONN-P-N silicon planar epitaxialtransistor intended for use in class-A,B and C operated mobile, industrialand military transmitters with anominal supply voltage of 13,5 V. Thetransistor is resistan
Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .
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