All Transistors. BLY93 Datasheet

 

BLY93 Datasheet and Replacement


   Type Designator: BLY93
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 44 W
   Maximum Collector-Base Voltage |Vcb|: 65 V
   Maximum Collector-Emitter Voltage |Vce|: 36 V
   Maximum Emitter-Base Voltage |Veb|: 4 V
   Maximum Collector Current |Ic max|: 2 A
   Max. Operating Junction Temperature (Tj): 200 °C
   Forward Current Transfer Ratio (hFE), MIN: 5
   Noise Figure, dB: -
   Package: M164
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BLY93 Datasheet (PDF)

 0.1. Size:269K  hgsemi
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BLY93

HG RF POWER TRANSISTORBLY93HSemiconductorsHGROHS Compliance,Silicon NPN POWER TRANSISTORDESCRIPTION: PACKAGE STYLE .380 4L STUD The HG BLY93H is Designed for .112x45 AClass C, 28 V High Band Applications up to 175 MHz. CBE CE EFEATURES: C EBCommon Emitter BPG = 9.0 dB at 25 W/175 MHz IDHOmnigold Metalization SystemJGMAXIMUM RATINGS

Datasheet: BLY89C , BLY90 , BLY91 , BLY91A , BLY91C , BLY92 , BLY92A , BLY92C , 2N2222 , BLY93A , BLY93C , BLY94 , BLY95 , BLY96 , BLY97 , BLY98 , BLY99 .

History: 2SC999A | KT6114E | 2N1226 | 2N1056 | UN9217R | KT8107D2 | ECG2306

Keywords - BLY93 transistor datasheet

 BLY93 cross reference
 BLY93 equivalent finder
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 BLY93 substitution
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