BLY93 Specs and Replacement
Type Designator: BLY93
Material of Transistor: Si
Polarity: NPN
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 44 W
Maximum Collector-Base Voltage |Vcb|: 65 V
Maximum Collector-Emitter Voltage |Vce|: 36 V
Maximum Emitter-Base Voltage |Veb|: 4 V
Maximum Collector Current |Ic max|: 2 A
Max. Operating Junction Temperature (Tj): 200 °C
Electrical Characteristics
Forward Current Transfer Ratio (hFE), MIN: 5
Package: M164
BLY93 Substitution
- BJT ⓘ Cross-Reference Search
BLY93 datasheet
HG RF POWER TRANSISTOR BLY93H Semiconductors HG ROHS Compliance,Silicon NPN POWER TRANSISTOR DESCRIPTION PACKAGE STYLE .380 4L STUD The HG BLY93H is Designed for .112x45 A Class C, 28 V High Band Applications up to 175 MHz. C B E C E E FEATURES C E B Common Emitter B PG = 9.0 dB at 25 W/175 MHz I D H Omnigold Metalization System J G MAXIMUM RATINGS ... See More ⇒
Detailed specifications: BLY89C, BLY90, BLY91, BLY91A, BLY91C, BLY92, BLY92A, BLY92C, 2N5401, BLY93A, BLY93C, BLY94, BLY95, BLY96, BLY97, BLY98, BLY99
Keywords - BLY93 pdf specs
BLY93 cross reference
BLY93 equivalent finder
BLY93 pdf lookup
BLY93 substitution
BLY93 replacement
