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BSR50 Specs and Replacement


   Type Designator: BSR50
   Material of Transistor: Si
   Polarity: NPN

Absolute Maximum Ratings


   Maximum Collector Power Dissipation (Pc): 0.8 W
   Maximum Collector-Base Voltage |Vcb|: 60 V
   Maximum Collector-Emitter Voltage |Vce|: 45 V
   Maximum Emitter-Base Voltage |Veb|: 5 V
   Maximum Collector Current |Ic max|: 2 A
   Max. Operating Junction Temperature (Tj): 150 °C

Electrical Characteristics


   Transition Frequency (ft): 175 MHz
   Forward Current Transfer Ratio (hFE), MIN: 2000
   Noise Figure, dB: -
   Package: TO92
 

 BSR50 Substitution

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BSR50 datasheet

 ..1. Size:27K  fairchild semi
 bsr50.pdf pdf_icon

BSR50

BSR50 NPN Darlington Transistor This device designed for applications requiring extremely high gain at collector currents to 0.5A. Sourced from Process 06. TO-92 1 1. Emitter 2. Collector 3. Base NPN Epitaxial Silicon Transistor Absolute Maximum Ratings TA=25 C unless otherwise noted Symbol Parameter Ratings Units VCEO Collector-Emitter Voltage 45 V VCBO Collector-Base Vo... See More ⇒

Detailed specifications: BSR30 , BSR31 , BSR32 , BSR33 , BSR40 , BSR41 , BSR42 , BSR43 , D882 , BSR51 , BSR52 , BSR55 , BSR59 , BSR60 , BSR61 , BSR62 , BSS10 .

History: L2SC2412KRLT1G | BC290A | 2SC4321 | 2SC2524

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