All Transistors. BSR50 Datasheet

 

BSR50 Datasheet and Replacement


   Type Designator: BSR50
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 0.8 W
   Maximum Collector-Base Voltage |Vcb|: 60 V
   Maximum Collector-Emitter Voltage |Vce|: 45 V
   Maximum Emitter-Base Voltage |Veb|: 5 V
   Maximum Collector Current |Ic max|: 2 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Transition Frequency (ft): 175 MHz
   Forward Current Transfer Ratio (hFE), MIN: 2000
   Noise Figure, dB: -
   Package: TO92
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BSR50 Datasheet (PDF)

 ..1. Size:27K  fairchild semi
 bsr50.pdf pdf_icon

BSR50

BSR50NPN Darlington Transistor This device designed for applications requiring extremely high gain at collector currents to 0.5A. Sourced from Process 06.TO-9211. Emitter 2. Collector 3. BaseNPN Epitaxial Silicon TransistorAbsolute Maximum Ratings TA=25C unless otherwise noted Symbol Parameter Ratings UnitsVCEO Collector-Emitter Voltage 45 VVCBO Collector-Base Vo

Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .

History: 2SC3844 | KSC5338DW | RT1N151C | D28B | CMBT6520 | DTA115EUAFRA | KT325V

Keywords - BSR50 transistor datasheet

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