All Transistors. BSR50 Datasheet

 

BSR50 Datasheet, Equivalent, Cross Reference Search

Type Designator: BSR50

Material of Transistor: Si

Polarity: NPN

Maximum Collector Power Dissipation (Pc): 0.8 W

Maximum Collector-Base Voltage |Vcb|: 60 V

Maximum Collector-Emitter Voltage |Vce|: 45 V

Maximum Emitter-Base Voltage |Veb|: 5 V

Maximum Collector Current |Ic max|: 2 A

Max. Operating Junction Temperature (Tj): 150 °C

Transition Frequency (ft): 175 MHz

Forward Current Transfer Ratio (hFE), MIN: 2000

Noise Figure, dB: -

Package: TO92

BSR50 Transistor Equivalent Substitute - Cross-Reference Search

 

BSR50 Datasheet (PDF)

0.1. bsr50.pdf Size:27K _fairchild_semi

BSR50
BSR50

BSR50NPN Darlington Transistor This device designed for applications requiring extremely high gain at collector currents to 0.5A. Sourced from Process 06.TO-9211. Emitter 2. Collector 3. BaseNPN Epitaxial Silicon TransistorAbsolute Maximum Ratings TA=25C unless otherwise noted Symbol Parameter Ratings UnitsVCEO Collector-Emitter Voltage 45 VVCBO Collector-Base Vo

Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , 9012 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .

 

 
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