BSR50 Specs and Replacement
Type Designator: BSR50
Material of Transistor: Si
Polarity: NPN
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 0.8 W
Maximum Collector-Base Voltage |Vcb|: 60 V
Maximum Collector-Emitter Voltage |Vce|: 45 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 2 A
Max. Operating Junction Temperature (Tj): 150 °C
Electrical Characteristics
Transition Frequency (ft): 175 MHz
Forward Current Transfer Ratio (hFE), MIN: 2000
Package: TO92
BSR50 Substitution
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BSR50 datasheet
BSR50 NPN Darlington Transistor This device designed for applications requiring extremely high gain at collector currents to 0.5A. Sourced from Process 06. TO-92 1 1. Emitter 2. Collector 3. Base NPN Epitaxial Silicon Transistor Absolute Maximum Ratings TA=25 C unless otherwise noted Symbol Parameter Ratings Units VCEO Collector-Emitter Voltage 45 V VCBO Collector-Base Vo... See More ⇒
Detailed specifications: BSR30 , BSR31 , BSR32 , BSR33 , BSR40 , BSR41 , BSR42 , BSR43 , D882 , BSR51 , BSR52 , BSR55 , BSR59 , BSR60 , BSR61 , BSR62 , BSS10 .
Keywords - BSR50 pdf specs
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