BSR52 Datasheet, Equivalent, Cross Reference Search
Type Designator: BSR52
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 0.8 W
Maximum Collector-Base Voltage |Vcb|: 100 V
Maximum Collector-Emitter Voltage |Vce|: 80 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 1 A
Max. Operating Junction Temperature (Tj): 150 °C
Transition Frequency (ft): 175 MHz
Forward Current Transfer Ratio (hFE), MIN: 4000
Noise Figure, dB: -
Package: TO92
BSR52 Transistor Equivalent Substitute - Cross-Reference Search
BSR52 Datasheet (PDF)
1.1. bsr52.pdf 
Size:52K _philips
DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D186 BSR52 NPN Darlington transistor 1999 Apr 26 Product specification Supersedes data of 1997 May 12 Philips Semiconductors Product specification NPN Darlington transistor BSR52 FEATURES PINNING • High current (max. 1 A) PIN DESCRIPTION • Low voltage (max. 80 V) 1 base • Integrated diode and resistor. 2 collector 3 em
Datasheet: BSR32 , BSR33 , BSR40 , BSR41 , BSR42 , BSR43 , BSR50 , BSR51 , MJE13003 , BSR55 , BSR59 , BSR60 , BSR61 , BSR62 , BSS10 , BSS11 , BSS12 .
