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BSR52 Specs and Replacement


   Type Designator: BSR52
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 0.8 W
   Maximum Collector-Base Voltage |Vcb|: 100 V
   Maximum Collector-Emitter Voltage |Vce|: 80 V
   Maximum Emitter-Base Voltage |Veb|: 5 V
   Maximum Collector Current |Ic max|: 1 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Transition Frequency (ft): 175 MHz
   Forward Current Transfer Ratio (hFE), MIN: 4000
   Noise Figure, dB: -
   Package: TO92

 BSR52 Transistor Equivalent Substitute - Cross-Reference Search

   

BSR52 detailed specifications

 ..1. Size:52K  philips
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BSR52

DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D186 BSR52 NPN Darlington transistor 1999 Apr 26 Product specification Supersedes data of 1997 May 12 Philips Semiconductors Product specification NPN Darlington transistor BSR52 FEATURES PINNING High current (max. 1 A) PIN DESCRIPTION Low voltage (max. 80 V) 1 base Integrated diode and resistor. 2 collector 3 em... See More ⇒

Detailed specifications: BSR32 , BSR33 , BSR40 , BSR41 , BSR42 , BSR43 , BSR50 , BSR51 , TIP42C , BSR55 , BSR59 , BSR60 , BSR61 , BSR62 , BSS10 , BSS11 , BSS12 .

History: 2SD2337 | 2SD857

Keywords - BSR52 transistor specs

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