BSR52 Datasheet, Equivalent, Cross Reference Search
Type Designator: BSR52
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 0.8 W
Maximum Collector-Base Voltage |Vcb|: 100 V
Maximum Collector-Emitter Voltage |Vce|: 80 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 1 A
Max. Operating Junction Temperature (Tj): 150 °C
Transition Frequency (ft): 175 MHz
Forward Current Transfer Ratio (hFE), MIN: 4000
Package: TO92
BSR52 Transistor Equivalent Substitute - Cross-Reference Search
BSR52 Datasheet (PDF)
0.1. bsr52.pdf 
Size:52K _philips
DISCRETE SEMICONDUCTORSDATA SHEETbook, halfpageM3D186BSR52NPN Darlington transistor1999 Apr 26Product specificationSupersedes data of 1997 May 12Philips Semiconductors Product specificationNPN Darlington transistor BSR52FEATURES PINNING High current (max. 1 A)PIN DESCRIPTION Low voltage (max. 80 V)1 base Integrated diode and resistor.2 collector3 em
Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , 9012 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .
