BSR52 Datasheet, Equivalent, Cross Reference Search
Type Designator: BSR52
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 0.8 W
Maximum Collector-Base Voltage |Vcb|: 100 V
Maximum Collector-Emitter Voltage |Vce|: 80 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 1 A
Max. Operating Junction Temperature (Tj): 150 °C
Transition Frequency (ft): 175 MHz
Forward Current Transfer Ratio (hFE), MIN: 4000
Noise Figure, dB: -
Package: TO92
BSR52 Transistor Equivalent Substitute - Cross-Reference Search
BSR52 Datasheet (PDF)
..1. Size:52K philips
bsr52.pdf
bsr52.pdf
DISCRETE SEMICONDUCTORSDATA SHEETbook, halfpageM3D186BSR52NPN Darlington transistor1999 Apr 26Product specificationSupersedes data of 1997 May 12Philips Semiconductors Product specificationNPN Darlington transistor BSR52FEATURES PINNING High current (max. 1 A)PIN DESCRIPTION Low voltage (max. 80 V)1 base Integrated diode and resistor.2 collector3 em
Datasheet: 2SA1803O , 2SA1803R , 2SA1804 , 2SA1804O , 2SA1804R , 2SA1805 , 2SA1805O , 2SA1805R , C3198 , 2SA181 , 2SA1810 , 2SA1810B , 2SA1810C , 2SA1811 , 2SA1815 , 2SA1815-3 , 2SA1815-4 .
