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2N3169 PDF Specs and Replacement

   Type Designator: 2N3169
   Material of Transistor: Si
   Polarity: PNP

Absolute Maximum Ratings

   Maximum Collector Power Dissipation (Pc): 85 W
   Maximum Collector-Base Voltage |Vcb|: 80 V
   Maximum Collector-Emitter Voltage |Vce|: 80 V
   Maximum Collector Current |Ic max|: 3 A
   Max. Operating Junction Temperature (Tj): 200 °C

Electrical Characteristics

   Transition Frequency (ft): 1 MHz
   Forward Current Transfer Ratio (hFE), MIN: 12
   Noise Figure, dB: -
   Package: TO53
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