BST50 Specs and Replacement
Type Designator: BST50
SMD Transistor Code: AS1
Material of Transistor: Si
Polarity: NPN
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 1 W
Maximum Collector-Base Voltage |Vcb|: 60 V
Maximum Collector-Emitter Voltage |Vce|: 45 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 0.5 A
Max. Operating Junction Temperature (Tj): 150 °C
Electrical Characteristics
Transition Frequency (ft): 150 MHz
Forward Current Transfer Ratio (hFE), MIN: 2000
Package: SOT89
BST50 Substitution
- BJT ⓘ Cross-Reference Search
BST50 datasheet
DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D109 BST50; BST51; BST52 NPN Darlington transistors 1999 Apr 26 Product specification Supersedes data of 1997 Apr 16 Philips Semiconductors Product specification NPN Darlington transistors BST50; BST51; BST52 FEATURES PINNING High current (max. 0.5 A) PIN DESCRIPTION Low voltage (max. 80 V) 1 emitter Integrated dio... See More ⇒
SMD Type Transistors Transistors NPN Darlington Transistor BST50;BST51;BST52 (KST50;KST51;KST52) Features Integrated diode and resistor. PNP complements BST60,BST61 and BST62. 1.70 0.1 0.42 0.1 0.46 0.1 2 1 1.Base 2.Collector 3.Emitter 3 Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector - Base Voltage VCBO BST50 60 BST51 80 BST52 90 Collect... See More ⇒
Detailed specifications: BSS82BL, BSS82C, BSS82CL, BSS99, BST15, BST16, BST39, BST40, A733, BST51, BST52, BST60, BST61, BST62, BSV10, BSV10-10, BSV10-16
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