BST50 Datasheet, Equivalent, Cross Reference Search
Type Designator: BST50
SMD Transistor Code: AS1
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 1 W
Maximum Collector-Base Voltage |Vcb|: 60 V
Maximum Collector-Emitter Voltage |Vce|: 45 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 0.5 A
Max. Operating Junction Temperature (Tj): 150 °C
Transition Frequency (ft): 150 MHz
Forward Current Transfer Ratio (hFE), MIN: 2000
Noise Figure, dB: -
Package: SOT89
BST50 Transistor Equivalent Substitute - Cross-Reference Search
BST50 Datasheet (PDF)
bst50 bst51 bst52 3.pdf
DISCRETE SEMICONDUCTORSDATA SHEETbook, halfpageM3D109BST50; BST51; BST52NPN Darlington transistors1999 Apr 26Product specificationSupersedes data of 1997 Apr 16Philips Semiconductors Product specificationNPN Darlington transistors BST50; BST51; BST52FEATURES PINNING High current (max. 0.5 A)PIN DESCRIPTION Low voltage (max. 80 V)1 emitter Integrated dio
bst50-52.pdf
SMD Type TransistorsTransistorsNPN Darlington TransistorBST50;BST51;BST52 (KST50;KST51;KST52) Features Integrated diode and resistor. PNP complements: BST60,BST61 and BST62.1.70 0.10.42 0.10.46 0.1211.Base2.Collector3.Emitter3 Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector - Base Voltage VCBOBST50 60BST51 80BST52 90 Collect
Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .
