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BSW66 PDF Specs and Replacement


   Type Designator: BSW66
   Material of Transistor: Si
   Polarity: NPN

Absolute Maximum Ratings


   Maximum Collector Power Dissipation (Pc): 0.8 W
   Maximum Collector-Base Voltage |Vcb|: 100 V
   Maximum Collector-Emitter Voltage |Vce|: 100 V
   Maximum Emitter-Base Voltage |Veb|: 5 V
   Maximum Collector Current |Ic max|: 1 A
   Max. Operating Junction Temperature (Tj): 200 °C

Electrical Characteristics


   Transition Frequency (ft): 80 MHz
   Collector Capacitance (Cc): 35 pF
   Forward Current Transfer Ratio (hFE), MIN: 30
   Noise Figure, dB: -
   Package: TO5
 

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BSW66 PDF detailed specifications

 ..1. Size:53K  philips
 bsw66 bsw67 bsw68 cnv 2.pdf pdf_icon

BSW66

DISCRETE SEMICONDUCTORS DATA SHEET M3D111 BSW66A; BSW67A; BSW68A NPN switching transistors 1997 May 05 Product specification Supersedes data of September 1994 File under Discrete Semiconductors, SC04 Philips Semiconductors Product specification NPN switching transistors BSW66A; BSW67A; BSW68A FEATURES PINNING High current (max. 1 A) PIN DESCRIPTION High voltage (max. 150 ... See More ⇒

Detailed specifications: BSW58 , BSW59 , BSW60 , BSW61 , BSW62 , BSW63 , BSW64 , BSW65 , 8050 , BSW66A , BSW67 , BSW67A , BSW68 , BSW68A , BSW69 , BSW70 , BSW72 .

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