BSW66 Datasheet. Specs and Replacement

Type Designator: BSW66  📄📄 

Material of Transistor: Si

Polarity: NPN

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 0.8 W

Maximum Collector-Base Voltage |Vcb|: 100 V

Maximum Collector-Emitter Voltage |Vce|: 100 V

Maximum Emitter-Base Voltage |Veb|: 5 V

Maximum Collector Current |Ic max|: 1 A

Max. Operating Junction Temperature (Tj): 200 °C

Electrical Characteristics

Transition Frequency (ft): 80 MHz

Collector Capacitance (Cc): 35 pF

Forward Current Transfer Ratio (hFE), MIN: 30

Noise Figure, dB: -

Package: TO5

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BSW66 datasheet

 ..1. Size:53K  philips

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BSW66

DISCRETE SEMICONDUCTORS DATA SHEET M3D111 BSW66A; BSW67A; BSW68A NPN switching transistors 1997 May 05 Product specification Supersedes data of September 1994 File under Discrete Semiconductors, SC04 Philips Semiconductors Product specification NPN switching transistors BSW66A; BSW67A; BSW68A FEATURES PINNING High current (max. 1 A) PIN DESCRIPTION High voltage (max. 150 ... See More ⇒

Detailed specifications: BSW58, BSW59, BSW60, BSW61, BSW62, BSW63, BSW64, BSW65, 8050, BSW66A, BSW67, BSW67A, BSW68, BSW68A, BSW69, BSW70, BSW72

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