All Transistors. BSW66 Datasheet

 

BSW66 Datasheet, Equivalent, Cross Reference Search


   Type Designator: BSW66
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 0.8 W
   Maximum Collector-Base Voltage |Vcb|: 100 V
   Maximum Collector-Emitter Voltage |Vce|: 100 V
   Maximum Emitter-Base Voltage |Veb|: 5 V
   Maximum Collector Current |Ic max|: 1 A
   Max. Operating Junction Temperature (Tj): 200 °C
   Transition Frequency (ft): 80 MHz
   Collector Capacitance (Cc): 35 pF
   Forward Current Transfer Ratio (hFE), MIN: 30
   Noise Figure, dB: -
   Package: TO5

 BSW66 Transistor Equivalent Substitute - Cross-Reference Search

   

BSW66 Datasheet (PDF)

 ..1. Size:53K  philips
 bsw66 bsw67 bsw68 cnv 2.pdf

BSW66 BSW66

DISCRETE SEMICONDUCTORSDATA SHEETM3D111BSW66A; BSW67A; BSW68ANPN switching transistors1997 May 05Product specificationSupersedes data of September 1994File under Discrete Semiconductors, SC04Philips Semiconductors Product specificationNPN switching transistors BSW66A; BSW67A; BSW68AFEATURES PINNING High current (max. 1 A)PIN DESCRIPTION High voltage (max. 150

Datasheet: 2SA1771 , 2SA178 , 2SA1790 , 2SA1791 , 2SA1792 , 2SA1793 , 2SA1794 , 2SA1795 , 2N3906 , 2SA1799 , 2SA17H , 2SA18 , 2SA180 , 2SA1800 , 2SA1800O , 2SA1800R , 2SA1800Y .

 

 
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