BSW67 Datasheet, Equivalent, Cross Reference Search
Type Designator: BSW67
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 0.8 W
Maximum Collector-Base Voltage |Vcb|: 120 V
Maximum Collector-Emitter Voltage |Vce|: 120 V
Maximum Emitter-Base Voltage |Veb|: 6 V
Maximum Collector Current |Ic max|: 1 A
Max. Operating Junction Temperature (Tj): 200 °C
Transition Frequency (ft): 40 MHz
Collector Capacitance (Cc): 35 pF
Forward Current Transfer Ratio (hFE), MIN: 30
Noise Figure, dB: -
Package: TO39
BSW67 Transistor Equivalent Substitute - Cross-Reference Search
BSW67 Datasheet (PDF)
bsw66 bsw67 bsw68 cnv 2.pdf
DISCRETE SEMICONDUCTORSDATA SHEETM3D111BSW66A; BSW67A; BSW68ANPN switching transistors1997 May 05Product specificationSupersedes data of September 1994File under Discrete Semiconductors, SC04Philips Semiconductors Product specificationNPN switching transistors BSW66A; BSW67A; BSW68AFEATURES PINNING High current (max. 1 A)PIN DESCRIPTION High voltage (max. 150
Datasheet: BSW60 , BSW61 , BSW62 , BSW63 , BSW64 , BSW65 , BSW66 , BSW66A , D882P , BSW67A , BSW68 , BSW68A , BSW69 , BSW70 , BSW72 , BSW73 , BSW74 .
History: 2SA117 | DTA144TUA | CFC3944Q | KRC862U
History: 2SA117 | DTA144TUA | CFC3944Q | KRC862U
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