All Transistors. 2N3209AQF Datasheet

 

2N3209AQF Datasheet, Equivalent, Cross Reference Search

Type Designator: 2N3209AQF

Material of Transistor: Si

Polarity: PNP

Maximum Collector Power Dissipation (Pc): 1.5 W

Maximum Collector-Base Voltage |Vcb|: 20 V

Maximum Collector-Emitter Voltage |Vce|: 20 V

Maximum Emitter-Base Voltage |Veb|: 4 V

Maximum Collector Current |Ic max|: 0.2 A

Max. Operating Junction Temperature (Tj): 175 °C

Transition Frequency (ft): 400 MHz

Collector Capacitance (Cc): 5 pF

Forward Current Transfer Ratio (hFE), MIN: 30

Noise Figure, dB: -

Package: LCC3

2N3209AQF Transistor Equivalent Substitute - Cross-Reference Search

 

2N3209AQF Datasheet (PDF)

8.1. 2n2894 2n3209.pdf Size:113K _st

2N3209AQF
2N3209AQF

8.2. 2n3209xcsm.pdf Size:25K _semelab

2N3209AQF
2N3209AQF

2N3209XCSM MECHANICAL DATA HIGH SPEED PNP Dimensions in mm (inches) SWITCHING TRANSISTOR FOR HIGH RELIABILITY 0.51 0.10(0.02 0.004) 0.31rad.(0.012)APPLICATIONS 32 1FEATURES SILICON PLANAR EPITAXIAL PNP 1.91 0.10 (0.075 0.004)ATRANSISTOR 0.31rad.(0.012)3.05 0.13 HERMETIC CERAMIC SURFACE MOUNT (0.12 0.005)1.40(0.055)PA

 8.3. 2n3209x.pdf Size:24K _semelab

2N3209AQF
2N3209AQF

2N3209X MECHANICAL DATA HIGH SPEED PNP Dimensions in mm (inches) 5.84 (0.230) SWITCHING 5.31 (0.209)TRANSISTOR 4.95 (0.195)4.52 (0.178)FOR HIGH RELIABILITY APPLICATIONS FEATURES SILICON PLANAR EPITAXIAL PNP TRANSISTOR SCREENING OPTIONS AVAILABLE 0.48 (0.019) SPACE QUALITY LEVEL OPTIONS 0.41 (0.016) HIGH SPEED SATURATED SWITCHING dia. APPLI

Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , 9012 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .

 

 
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