2N3209AQF PDF and Equivalents Search

 

2N3209AQF Specs and Replacement


   Type Designator: 2N3209AQF
   Material of Transistor: Si
   Polarity: PNP

Absolute Maximum Ratings


   Maximum Collector Power Dissipation (Pc): 1.5 W
   Maximum Collector-Base Voltage |Vcb|: 20 V
   Maximum Collector-Emitter Voltage |Vce|: 20 V
   Maximum Emitter-Base Voltage |Veb|: 4 V
   Maximum Collector Current |Ic max|: 0.2 A
   Max. Operating Junction Temperature (Tj): 175 °C

Electrical Characteristics


   Transition Frequency (ft): 400 MHz
   Collector Capacitance (Cc): 5 pF
   Forward Current Transfer Ratio (hFE), MIN: 30
   Noise Figure, dB: -
   Package: LCC3
 

 2N3209AQF Substitution

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2N3209AQF datasheet

 8.1. Size:113K  st
 2n2894 2n3209.pdf pdf_icon

2N3209AQF

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 8.2. Size:24K  semelab
 2n3209x.pdf pdf_icon

2N3209AQF

2N3209X MECHANICAL DATA HIGH SPEED PNP Dimensions in mm (inches) 5.84 (0.230) SWITCHING 5.31 (0.209) TRANSISTOR 4.95 (0.195) 4.52 (0.178) FOR HIGH RELIABILITY APPLICATIONS FEATURES SILICON PLANAR EPITAXIAL PNP TRANSISTOR SCREENING OPTIONS AVAILABLE 0.48 (0.019) SPACE QUALITY LEVEL OPTIONS 0.41 (0.016) HIGH SPEED SATURATED SWITCHING dia. APPLI... See More ⇒

 8.3. Size:25K  semelab
 2n3209xcsm.pdf pdf_icon

2N3209AQF

2N3209XCSM MECHANICAL DATA HIGH SPEED PNP Dimensions in mm (inches) SWITCHING TRANSISTOR FOR HIGH RELIABILITY 0.51 0.10 (0.02 0.004) 0.31 rad. (0.012) APPLICATIONS 3 2 1 FEATURES SILICON PLANAR EPITAXIAL PNP 1.91 0.10 (0.075 0.004) A TRANSISTOR 0.31 rad. (0.012) 3.05 0.13 HERMETIC CERAMIC SURFACE MOUNT (0.12 0.005) 1.40 (0.055) PA... See More ⇒

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Detailed specifications: 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , 2N3208 , 2N3209 , TIP35C , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 , 2N3212 , 2N3213 .

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