All Transistors. BSZ11 Datasheet

 

BSZ11 Datasheet and Replacement


   Type Designator: BSZ11
   Material of Transistor: Si
   Polarity: PNP
   Maximum Collector Power Dissipation (Pc): 0.25 W
   Maximum Collector-Base Voltage |Vcb|: 25 V
   Maximum Collector-Emitter Voltage |Vce|: 20 V
   Maximum Emitter-Base Voltage |Veb|: 5 V
   Maximum Collector Current |Ic max|: 0.05 A
   Max. Operating Junction Temperature (Tj): 175 °C
   Transition Frequency (ft): 1 MHz
   Forward Current Transfer Ratio (hFE), MIN: 25
   Noise Figure, dB: -
   Package: TO18
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BSZ11 Datasheet (PDF)

 0.1. Size:1359K  infineon
 bsz110n08ns5.pdf pdf_icon

BSZ11

MOSFETMetal Oxide Semiconductor Field Effect TransistorOptiMOSTMOptiMOS5 Power-Transistor, 80 VBSZ110N08NS5Data SheetRev. 2.1FinalPower Management & MultimarketOptiMOS5 Power-Transistor, 80 VBSZ110N08NS5TSDSON-8 FL1 Description(enlarged source interconnection)Features Ideal for high frequency switching and sync. rec. Optimized technology for DC/DC conv

 0.2. Size:459K  infineon
 bsz110n06ns3 bsz110n06ns3g.pdf pdf_icon

BSZ11

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Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .

History: ESM2060 | 2SC6098-TL-E | DTA123EET1G | 3DD4617H | MP602 | KRC823U | FJX2222A

Keywords - BSZ11 transistor datasheet

 BSZ11 cross reference
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