BSZ11 Specs and Replacement
Type Designator: BSZ11
Material of Transistor: Si
Polarity: PNP
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 0.25 W
Maximum Collector-Base Voltage |Vcb|: 25 V
Maximum Collector-Emitter Voltage |Vce|: 20 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 0.05 A
Max. Operating Junction Temperature (Tj): 175 °C
Electrical Characteristics
Transition Frequency (ft): 1 MHz
Forward Current Transfer Ratio (hFE), MIN: 25
Package: TO18
BSZ11 Substitution
- BJT ⓘ Cross-Reference Search
BSZ11 datasheet
MOSFET Metal Oxide Semiconductor Field Effect Transistor OptiMOSTM OptiMOS 5 Power-Transistor, 80 V BSZ110N08NS5 Data Sheet Rev. 2.1 Final Power Management & Multimarket OptiMOS 5 Power-Transistor, 80 V BSZ110N08NS5 TSDSON-8 FL 1 Description (enlarged source interconnection) Features Ideal for high frequency switching and sync. rec. Optimized technology for DC/DC conv... See More ⇒
bsz110n06ns3 bsz110n06ns3g.pdf 
pe $) $ TM " A 03 B53 R 11 m D n) m x Q ( @D9=9J54 D538>?F5BD5BC I D Q H35>5?B=1... See More ⇒
Detailed specifications: BSY95A, BSYP04, BSYP05, BSYP06, BSYP07, BSYP62, BSYP63, BSZ10, D882P, BT2483, BT2483T, BT2484, BT2484T, BT2604, BT2604T, BT2605, BT2605T
Keywords - BSZ11 pdf specs
BSZ11 cross reference
BSZ11 equivalent finder
BSZ11 pdf lookup
BSZ11 substitution
BSZ11 replacement
