All Transistors. BU1008ADF Datasheet

 

BU1008ADF Datasheet, Equivalent, Cross Reference Search


   Type Designator: BU1008ADF
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 50 W
   Maximum Collector-Emitter Voltage |Vce|: 700 V
   Maximum Emitter-Base Voltage |Veb|: 5 V
   Maximum Collector Current |Ic max|: 8 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Forward Current Transfer Ratio (hFE), MIN: 4
   Noise Figure, dB: -
   Package: TO220

 BU1008ADF Transistor Equivalent Substitute - Cross-Reference Search

   

BU1008ADF Datasheet (PDF)

 9.1. Size:206K  inchange semiconductor
 bu100.pdf

BU1008ADF BU1008ADF

isc Silicon NPN Power Transistor BU100DESCRIPTIONCollector-Emitter Sustaining Voltage-: V = 60V(Min.)CEO(SUS)Low Collector Saturation Voltage-: V = 3.3V(Max.)@ I = 8ACE(sat) CMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for horizontal deflection output stage of CTVreceivers and high voltage,fast switching a

Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .

History: 2SA1013O

 

 
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