BU1008ADF Specs and Replacement

Type Designator: BU1008ADF

Material of Transistor: Si

Polarity: NPN

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 50 W

Maximum Collector-Emitter Voltage |Vce|: 700 V

Maximum Emitter-Base Voltage |Veb|: 5 V

Maximum Collector Current |Ic max|: 8 A

Max. Operating Junction Temperature (Tj): 150 °C

Electrical Characteristics

Forward Current Transfer Ratio (hFE), MIN: 4

Noise Figure, dB: -

Package: TO220

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BU1008ADF datasheet

 9.1. Size:206K  inchange semiconductor

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BU1008ADF

isc Silicon NPN Power Transistor BU100 DESCRIPTION Collector-Emitter Sustaining Voltage- V = 60V(Min.) CEO(SUS) Low Collector Saturation Voltage- V = 3.3V(Max.)@ I = 8A CE(sat) C Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for horizontal deflection output stage of CTV receivers and high voltage,fast switching a... See More ⇒

Detailed specifications: BT3999T, BT4260, BT4261, BT929, BT929T, BT930, BT930T, BU100, MJE340, BU1008AF, BU100A, BU102, BU103, BU103A, BU104, BU104D, BU104DP

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